{"title":"原子层沉积法提高铝掺杂HfO2薄膜的阻性开关稳定性","authors":"Ching-Shiang Peng, W. Chang, Yi-Hsuan Lee, M. Lin, Frederick T. Chen, M. Tsai","doi":"10.1149/2.011204ESL","DOIUrl":null,"url":null,"abstract":"This study investigates an optimized uniformity of Al-doped HfO2 resistive random access memory (RRAM) device. The Al-doped HfO2 RRAM devices in this study exhibit excellent uniformity and stable resistive switching behavior. This is due to the formation of Hf-O-Al bonding to reduce the oxygen vacancy formation energy. An Arrhenius plot shows that the difference in activation energy caused by doping effects can be attributed to a Fermi level shift, which in turn decreases the resistance of the high resistance state. The temperature-dependent retention test makes it possible to predict the data storage capability of the Al-doped HfO2 resistive RRAM device. © 2012 The Electrochemical Society. [DOI: 10.1149/2.011204esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"122 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"47","resultStr":"{\"title\":\"Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition\",\"authors\":\"Ching-Shiang Peng, W. Chang, Yi-Hsuan Lee, M. Lin, Frederick T. Chen, M. Tsai\",\"doi\":\"10.1149/2.011204ESL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study investigates an optimized uniformity of Al-doped HfO2 resistive random access memory (RRAM) device. The Al-doped HfO2 RRAM devices in this study exhibit excellent uniformity and stable resistive switching behavior. This is due to the formation of Hf-O-Al bonding to reduce the oxygen vacancy formation energy. An Arrhenius plot shows that the difference in activation energy caused by doping effects can be attributed to a Fermi level shift, which in turn decreases the resistance of the high resistance state. The temperature-dependent retention test makes it possible to predict the data storage capability of the Al-doped HfO2 resistive RRAM device. © 2012 The Electrochemical Society. [DOI: 10.1149/2.011204esl] All rights reserved.\",\"PeriodicalId\":11627,\"journal\":{\"name\":\"Electrochemical and Solid State Letters\",\"volume\":\"122 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"47\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrochemical and Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.011204ESL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.011204ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 47
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