Bo He, Q. Zhong, Xu Jing, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin
{"title":"一种新型紫蓝增强型SINP硅光电器件","authors":"Bo He, Q. Zhong, Xu Jing, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin","doi":"10.1109/SOPO.2009.5230108","DOIUrl":null,"url":null,"abstract":"A novel ITO/SiO2/np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength range of 400-600nm, low temperature thermally grown an ultrathin silicon dioxide and RF sputtering ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The current-voltage (I-V) characteristics, spectral response and responsivity of high quantum efficiency of violet SINP photovoltaic device and deep junction SINP photovoltaic device were calculated and analyzed in detail. Keywords— ITO; SINP photovoltaic device; current-voltage(I-V) characteristics; spectral response; responsivity","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Novel Violet and Blue Enhanced SINP Silicon Photovoltaic Device\",\"authors\":\"Bo He, Q. Zhong, Xu Jing, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin\",\"doi\":\"10.1109/SOPO.2009.5230108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel ITO/SiO2/np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength range of 400-600nm, low temperature thermally grown an ultrathin silicon dioxide and RF sputtering ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The current-voltage (I-V) characteristics, spectral response and responsivity of high quantum efficiency of violet SINP photovoltaic device and deep junction SINP photovoltaic device were calculated and analyzed in detail. Keywords— ITO; SINP photovoltaic device; current-voltage(I-V) characteristics; spectral response; responsivity\",\"PeriodicalId\":6416,\"journal\":{\"name\":\"2009 Symposium on Photonics and Optoelectronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2009.5230108\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2009.5230108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Novel Violet and Blue Enhanced SINP Silicon Photovoltaic Device
A novel ITO/SiO2/np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength range of 400-600nm, low temperature thermally grown an ultrathin silicon dioxide and RF sputtering ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The current-voltage (I-V) characteristics, spectral response and responsivity of high quantum efficiency of violet SINP photovoltaic device and deep junction SINP photovoltaic device were calculated and analyzed in detail. Keywords— ITO; SINP photovoltaic device; current-voltage(I-V) characteristics; spectral response; responsivity
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
