{"title":"基于BN量子阱的新型石墨烯纳米带共振隧道二极管","authors":"Farshad Mohajer Yami, S. E. Hosseini","doi":"10.1109/IranianCEE.2019.8786464","DOIUrl":null,"url":null,"abstract":"Negative Differential Resistance (NDR) is a well-known phenomenon in I-V characteristic of some electron devices such as Resonant Tunneling Diodes (RTDs), Esaki diode and resonant tunneling transistors. In this article a Double Barrier Quantum Well structures (DBQW) resonant tunneling diode has been proposed based on graphene nanoribbon and hexagonal-Boron Nitride. Three different channel RTD structures constructed from ZGNRs are proposed. In these structures, highest peak current of 2.1 µA, and lowest valley current 100nA is achieved. The transport properties of DBQW are explored by Non-Equilibrium Green's-Function (NEGF) formalism.","PeriodicalId":6683,"journal":{"name":"2019 27th Iranian Conference on Electrical Engineering (ICEE)","volume":"34 1","pages":"315-317"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A New Graphene Nanoribbon based Resonant Tunneling Diodes using BN Quantum Well\",\"authors\":\"Farshad Mohajer Yami, S. E. Hosseini\",\"doi\":\"10.1109/IranianCEE.2019.8786464\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Negative Differential Resistance (NDR) is a well-known phenomenon in I-V characteristic of some electron devices such as Resonant Tunneling Diodes (RTDs), Esaki diode and resonant tunneling transistors. In this article a Double Barrier Quantum Well structures (DBQW) resonant tunneling diode has been proposed based on graphene nanoribbon and hexagonal-Boron Nitride. Three different channel RTD structures constructed from ZGNRs are proposed. In these structures, highest peak current of 2.1 µA, and lowest valley current 100nA is achieved. The transport properties of DBQW are explored by Non-Equilibrium Green's-Function (NEGF) formalism.\",\"PeriodicalId\":6683,\"journal\":{\"name\":\"2019 27th Iranian Conference on Electrical Engineering (ICEE)\",\"volume\":\"34 1\",\"pages\":\"315-317\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 27th Iranian Conference on Electrical Engineering (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IranianCEE.2019.8786464\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 27th Iranian Conference on Electrical Engineering (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IranianCEE.2019.8786464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A New Graphene Nanoribbon based Resonant Tunneling Diodes using BN Quantum Well
Negative Differential Resistance (NDR) is a well-known phenomenon in I-V characteristic of some electron devices such as Resonant Tunneling Diodes (RTDs), Esaki diode and resonant tunneling transistors. In this article a Double Barrier Quantum Well structures (DBQW) resonant tunneling diode has been proposed based on graphene nanoribbon and hexagonal-Boron Nitride. Three different channel RTD structures constructed from ZGNRs are proposed. In these structures, highest peak current of 2.1 µA, and lowest valley current 100nA is achieved. The transport properties of DBQW are explored by Non-Equilibrium Green's-Function (NEGF) formalism.
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