Self-powered ultraviolet photodiode based on lateral polarity structure GaN films

In this work, we report on a self-powered ultraviolet photodiode realized using lateral polarity structure (LPS) GaN films. The opposite nature of the polarization charge yields different barrier heights at the standard Ni/Au Schottky contact interface of N-polar and III-polar GaN films. As a result, a natural nonzero built-in potential is obtained in the LPS GaN photodiode, which showed photoresponsivity even at 0 V applied bias. The self-powered mechanism inside such an LPS GaN photodiode is discussed in detail by a combination of simulation prediction and experimental validation. Furthermore, a variation in the doping concentration of the adjacent III- and N-polar GaN domain is shown to improve the photoresponsivity compared to the conventional III-polar photodiode. Thus, this work validates that the LPS GaN photodiode is a promising candidate to realize self-powered operation and a general design rule for the photodiode with in-plane built-in potential.