{"title":"用cl2基ICP刻蚀AIGaN/GaN HEMT结构","authors":"Z. Gao, M. Romero, F. Calle","doi":"10.1109/CDE.2013.6481334","DOIUrl":null,"url":null,"abstract":"AIGaN/GaN mesa etching using different plasma combinations of Cl<sub>2</sub>/Ar, Cl<sub>2</sub>/BCl<sub>3</sub> and Cl<sub>2</sub>/CF<sub>4</sub> by inductively coupled plasma was investigated. It was observed that the etch rate of Cl<sub>2</sub>/Ar increases linearly with the Ar content. In contrast to the Ar-based mixtures, C<sub>l2</sub>/BCl<sub>3</sub> and Cl<sub>2</sub>/CF<sub>4</sub> plasma combinations show a damage-free surface. Furthermore, the lowest isolation current values achieved in devices with reduced sheet resistance were achieved by using C<sub>l2</sub>/BCl<sub>3</sub> plasma.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"39 1","pages":"29-32"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Etching of AIGaN/GaN HEMT structures by Cl2-based ICP\",\"authors\":\"Z. Gao, M. Romero, F. Calle\",\"doi\":\"10.1109/CDE.2013.6481334\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AIGaN/GaN mesa etching using different plasma combinations of Cl<sub>2</sub>/Ar, Cl<sub>2</sub>/BCl<sub>3</sub> and Cl<sub>2</sub>/CF<sub>4</sub> by inductively coupled plasma was investigated. It was observed that the etch rate of Cl<sub>2</sub>/Ar increases linearly with the Ar content. In contrast to the Ar-based mixtures, C<sub>l2</sub>/BCl<sub>3</sub> and Cl<sub>2</sub>/CF<sub>4</sub> plasma combinations show a damage-free surface. Furthermore, the lowest isolation current values achieved in devices with reduced sheet resistance were achieved by using C<sub>l2</sub>/BCl<sub>3</sub> plasma.\",\"PeriodicalId\":6614,\"journal\":{\"name\":\"2013 Spanish Conference on Electron Devices\",\"volume\":\"39 1\",\"pages\":\"29-32\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2013.6481334\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481334","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Etching of AIGaN/GaN HEMT structures by Cl2-based ICP
AIGaN/GaN mesa etching using different plasma combinations of Cl2/Ar, Cl2/BCl3 and Cl2/CF4 by inductively coupled plasma was investigated. It was observed that the etch rate of Cl2/Ar increases linearly with the Ar content. In contrast to the Ar-based mixtures, Cl2/BCl3 and Cl2/CF4 plasma combinations show a damage-free surface. Furthermore, the lowest isolation current values achieved in devices with reduced sheet resistance were achieved by using Cl2/BCl3 plasma.
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