T. Gessert, X. Li, T. Coutts, P. W. Phelps, N. Tzafaras
{"title":"小规模生产4cm /sup 2/ ITO/InP光伏太阳能电池","authors":"T. Gessert, X. Li, T. Coutts, P. W. Phelps, N. Tzafaras","doi":"10.1109/ICIPRM.1991.147287","DOIUrl":null,"url":null,"abstract":"The procedures and results of a project that produced large-area (4-cm/sup 2/) cells using the sputtering process used to form small-area indium tin oxide (ITO)/InP solar cells are described. Although only a small number of the 4-cm/sup 2/ ITO/InP cells (approximately 10 cells total) were fabricated, the efficiency of the best cell compares favorably with the best result reported from a larger production of approximately 1300 2-cm/sup 2/ cells in which the junction was fabricated through a closed-ampoule diffusion process. The average cell efficiency is determined to be 15.5%, with a standard deviation of 0.35%. The highest cell performance obtained is 16.1% AM0 (SERI measurement). Preliminary dark I-V data analysis indicates that the cells demonstrate near-ideal characteristics, with a diode-ideality factor and reverse-saturation current density of 1.02 and 1.1 *10/sup -12/ mAcm/sup -2/, respectively.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"77 6 1","pages":"32-35"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Small-scale production of 4-cm/sup 2/ ITO/InP photovoltaic solar cells\",\"authors\":\"T. Gessert, X. Li, T. Coutts, P. W. Phelps, N. Tzafaras\",\"doi\":\"10.1109/ICIPRM.1991.147287\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The procedures and results of a project that produced large-area (4-cm/sup 2/) cells using the sputtering process used to form small-area indium tin oxide (ITO)/InP solar cells are described. Although only a small number of the 4-cm/sup 2/ ITO/InP cells (approximately 10 cells total) were fabricated, the efficiency of the best cell compares favorably with the best result reported from a larger production of approximately 1300 2-cm/sup 2/ cells in which the junction was fabricated through a closed-ampoule diffusion process. The average cell efficiency is determined to be 15.5%, with a standard deviation of 0.35%. The highest cell performance obtained is 16.1% AM0 (SERI measurement). Preliminary dark I-V data analysis indicates that the cells demonstrate near-ideal characteristics, with a diode-ideality factor and reverse-saturation current density of 1.02 and 1.1 *10/sup -12/ mAcm/sup -2/, respectively.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"77 6 1\",\"pages\":\"32-35\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147287\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147287","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Small-scale production of 4-cm/sup 2/ ITO/InP photovoltaic solar cells
The procedures and results of a project that produced large-area (4-cm/sup 2/) cells using the sputtering process used to form small-area indium tin oxide (ITO)/InP solar cells are described. Although only a small number of the 4-cm/sup 2/ ITO/InP cells (approximately 10 cells total) were fabricated, the efficiency of the best cell compares favorably with the best result reported from a larger production of approximately 1300 2-cm/sup 2/ cells in which the junction was fabricated through a closed-ampoule diffusion process. The average cell efficiency is determined to be 15.5%, with a standard deviation of 0.35%. The highest cell performance obtained is 16.1% AM0 (SERI measurement). Preliminary dark I-V data analysis indicates that the cells demonstrate near-ideal characteristics, with a diode-ideality factor and reverse-saturation current density of 1.02 and 1.1 *10/sup -12/ mAcm/sup -2/, respectively.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
