{"title":"InP的EC-V谱分析","authors":"M. Faur, C. Vargas, M. Goradia","doi":"10.1109/ICIPRM.1991.147360","DOIUrl":null,"url":null,"abstract":"The electrochemical current-voltage profiling of p, n, p/sup +/, and n/sup +/ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n/sup +/p and p/sup +/n, and epitaxially grown n/sup +/p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm/sup 2/.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"310-314"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"EC-V profiling of InP\",\"authors\":\"M. Faur, C. Vargas, M. Goradia\",\"doi\":\"10.1109/ICIPRM.1991.147360\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrochemical current-voltage profiling of p, n, p/sup +/, and n/sup +/ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n/sup +/p and p/sup +/n, and epitaxially grown n/sup +/p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm/sup 2/.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"13 1\",\"pages\":\"310-314\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147360\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147360","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
p, n, p/sup +/和n/sup +/液体封装的chzochralski (LEC)或VGE生长在p衬底的电化学电流-电压谱。本文描述了热扩散的n/sup +/p和p/sup +/n，以及使用一种称为FAP的电解质外延生长的n/sup +/p InP结构。研究发现，在高达0.3 mA/cm/sup /的电流密度下，FAP电解质在执行InP的精确EC-V分析方面，本质上优于先前报道的电解质(0.5 M HCl和Pear蚀刻液)。
The electrochemical current-voltage profiling of p, n, p/sup +/, and n/sup +/ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n/sup +/p and p/sup +/n, and epitaxially grown n/sup +/p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm/sup 2/.<>
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