Càndid Reig, M. Cubells, J. Madrenas, A. De Marcellis, S. Cardoso, P. Freitas
{"title":"电阻器件的准数字转换:在基于gmr的IC电流传感器中的应用","authors":"Càndid Reig, M. Cubells, J. Madrenas, A. De Marcellis, S. Cardoso, P. Freitas","doi":"10.1109/CDE.2013.6481361","DOIUrl":null,"url":null,"abstract":"Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-to-frequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology has been also analyzed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"52 1","pages":"135-138"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Quasi-digital conversion for resistive devices: Application in GMR-based IC current sensors\",\"authors\":\"Càndid Reig, M. Cubells, J. Madrenas, A. De Marcellis, S. Cardoso, P. Freitas\",\"doi\":\"10.1109/CDE.2013.6481361\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-to-frequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology has been also analyzed.\",\"PeriodicalId\":6614,\"journal\":{\"name\":\"2013 Spanish Conference on Electron Devices\",\"volume\":\"52 1\",\"pages\":\"135-138\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2013.6481361\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481361","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quasi-digital conversion for resistive devices: Application in GMR-based IC current sensors
Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-to-frequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology has been also analyzed.