n-InP衬底晶格参数变化对InP/InGaAsP-DHS复合材料性能的影响

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147364

A. Knauer, R. Staske, J. Krausslich, R. Kittner

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摘要

介绍了InP衬底和InP/InGaAsP双异质结构(DHSs)的精确晶格参数和光致发光测量。测量结果表明，在自由载流子浓度富集的区域，使用强n型掺杂的InP衬底实现了晶格扩张

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Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS

Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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