双自对准间隔器在石墨烯纳米带晶体管上的横场带隙调制

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6256978

Lieh-Ting Tung, M. V. Mateus, E. Kan

{"title":"双自对准间隔器在石墨烯纳米带晶体管上的横场带隙调制","authors":"Lieh-Ting Tung, M. V. Mateus, E. Kan","doi":"10.1109/DRC.2012.6256978","DOIUrl":null,"url":null,"abstract":"Independently-driven tri-gate graphene nanoribbon transistors were implemented by CMOS-compatible double-self-aligned spacer lithography, which effectively suppresses the line edge roughness and width variation. The consistent electrical characteristics show bandgap modulation with transverse electrical fields and ambipolar conduction with perpendicular fields in graphene film.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"6 1","pages":"113-114"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Transverse-field bandgap modulation on graphene nanoribbon transistors by double-self-aligned spacers\",\"authors\":\"Lieh-Ting Tung, M. V. Mateus, E. Kan\",\"doi\":\"10.1109/DRC.2012.6256978\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Independently-driven tri-gate graphene nanoribbon transistors were implemented by CMOS-compatible double-self-aligned spacer lithography, which effectively suppresses the line edge roughness and width variation. The consistent electrical characteristics show bandgap modulation with transverse electrical fields and ambipolar conduction with perpendicular fields in graphene film.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"6 1\",\"pages\":\"113-114\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6256978\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用与cmos兼容的双自对准间隔光刻技术实现了独立驱动的三栅极石墨烯纳米带晶体管，有效地抑制了线边缘粗糙度和宽度变化。石墨烯薄膜的一致电学特性表现为横向电场的带隙调制和垂直电场的双极性导电。

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Transverse-field bandgap modulation on graphene nanoribbon transistors by double-self-aligned spacers

Independently-driven tri-gate graphene nanoribbon transistors were implemented by CMOS-compatible double-self-aligned spacer lithography, which effectively suppresses the line edge roughness and width variation. The consistent electrical characteristics show bandgap modulation with transverse electrical fields and ambipolar conduction with perpendicular fields in graphene film.

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70th Device Research Conference

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