{"title":"太阳电池磁控溅射前驱体硒化法制备Cu2ZnSnSe4薄膜","authors":"S. Kuo, Jui‐Fu Yang, F. Lai, Chun-Jung Lin","doi":"10.1109/PVSC.2012.6318148","DOIUrl":null,"url":null,"abstract":"Precursors of the Cu2ZnSnSe4 (CZTSe) absorber were deposition on Mo/glass substrate by radio-frequency (RF) magnetron sputtering at room temperature. The precursors were converted into CZTSe absorber by annealing in the selenium vapors at the substrate temperature of 550°C. CZTSe films have been characterized in detail using X-ray diffraction (XRD), Raman spectroscopy, photo luminescence (PL), energy dispersive spectrometer (EDS), and solar simulator. It was found that the structural and optical properties of CZTSe films. The p-type CZTSe absorber shows a peak below 0.9 eV at room temperature. Solar cells with the AZO/ZnO/CdS/CZTSe/Mo showed the best conversion efficiency of 1.78% for 0.13 cm2 with Voc= 0.21 V, Jsc= 27.1 mA/cm2, and FF= 31.3%.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"49 1","pages":"002688-002691"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth of Cu2ZnSnSe4 thin films by selenization of magnetron sputtered precursors for solar cells\",\"authors\":\"S. Kuo, Jui‐Fu Yang, F. Lai, Chun-Jung Lin\",\"doi\":\"10.1109/PVSC.2012.6318148\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Precursors of the Cu2ZnSnSe4 (CZTSe) absorber were deposition on Mo/glass substrate by radio-frequency (RF) magnetron sputtering at room temperature. The precursors were converted into CZTSe absorber by annealing in the selenium vapors at the substrate temperature of 550°C. CZTSe films have been characterized in detail using X-ray diffraction (XRD), Raman spectroscopy, photo luminescence (PL), energy dispersive spectrometer (EDS), and solar simulator. It was found that the structural and optical properties of CZTSe films. The p-type CZTSe absorber shows a peak below 0.9 eV at room temperature. Solar cells with the AZO/ZnO/CdS/CZTSe/Mo showed the best conversion efficiency of 1.78% for 0.13 cm2 with Voc= 0.21 V, Jsc= 27.1 mA/cm2, and FF= 31.3%.\",\"PeriodicalId\":6318,\"journal\":{\"name\":\"2012 38th IEEE Photovoltaic Specialists Conference\",\"volume\":\"49 1\",\"pages\":\"002688-002691\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 38th IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2012.6318148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 38th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2012.6318148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of Cu2ZnSnSe4 thin films by selenization of magnetron sputtered precursors for solar cells
Precursors of the Cu2ZnSnSe4 (CZTSe) absorber were deposition on Mo/glass substrate by radio-frequency (RF) magnetron sputtering at room temperature. The precursors were converted into CZTSe absorber by annealing in the selenium vapors at the substrate temperature of 550°C. CZTSe films have been characterized in detail using X-ray diffraction (XRD), Raman spectroscopy, photo luminescence (PL), energy dispersive spectrometer (EDS), and solar simulator. It was found that the structural and optical properties of CZTSe films. The p-type CZTSe absorber shows a peak below 0.9 eV at room temperature. Solar cells with the AZO/ZnO/CdS/CZTSe/Mo showed the best conversion efficiency of 1.78% for 0.13 cm2 with Voc= 0.21 V, Jsc= 27.1 mA/cm2, and FF= 31.3%.
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