第12次会议概述:DRAM:内存小组委员会

Seung-Jun Bae, W. Spirkl, Leland Chang
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引用次数: 0

摘要

由于机器学习、虚拟现实和增强现实等新领域的出现,对高性能和高容量dram的需求比过去急剧增长。与这一趋势相一致,今年推出了容量为16Gb、数据速率为18Gb/s/pin的创新产品。这些变化在高性能计算、游戏图形、移动和服务器领域(包括人工智能)都很常见。新一代GDDR6标准的两篇图形DRAM论文显示,单端信令的最大数据速率为16 ~ 18Gb/s/pin, LPDDR4X和DDR4中引入了10nm制程节点的16Gb高密度DRAM。HBM2扩展到8H堆栈,实现64Gb密度,同时保持341GB/s的BW。
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Session 12 overview: DRAM: Memory subcommittee
Demand for high-performance and high-capacity DRAMs is increasing more dramatically than in the past, due to the emergence of new areas such as machine learning, VR and AR. In line with this trend, new innovations with capacities of 16Gb and data-rate speeds of 18Gb/s/pin are introduced this year. These changes are common to high-performance computing, gaming graphics, mobile, and server fields, including artificial intelligence. Two graphics DRAM papers of the next generation GDDR6 standard show a maximum data rate of 16 to 18Gb/s/pin with single-ended signaling, and 16Gb high-density DRAMs in a 10nm process node are introduced in LPDDR4X and DDR4. HBM2 is extended to an 8H stack for 64Gb density while keeping a BW of 341GB/s.
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