Zunping Xu, Xiaoyang Chen, Jianguo Zhu, D. Xiao, P. Yu
{"title":"退火温度对射频磁控溅射制备Mn/Y共掺杂Ba0.67Sr0.33TiO3薄膜性能的影响","authors":"Zunping Xu, Xiaoyang Chen, Jianguo Zhu, D. Xiao, P. Yu","doi":"10.1109/ISAF.2012.6297790","DOIUrl":null,"url":null,"abstract":"Mn/Y co-doped Ba<sub>0.67</sub>Sr<sub>0.33</sub>TiO<sub>3</sub> (Mn+Y: BST) thin films were deposited on LaNiO<sub>3</sub> (LNO)/SiO<sub>2</sub>/Si substrates by radio frequency (RF) magnetron sputtering at substrate temperature of 400 °C. Influence of the annealing temperature on microstructure and electrical properties of the Mn+Y: BST films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that all the films have dense and crack-free surface with a perovskite structure. The Mn+Y: BST films annealed at 700 °C showed the best electrical properties, with a dielectric constant of 875, dielectric loss of 0.032, tunability of 60% at room temperature and 100 kHz, and the leakage current density of 6.7×10<sup>-5</sup> A/cm<sup>2</sup> at an electric field of 400 kV/cm, respectively.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"23 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Influence of annealing temperature on properties of Mn/Y co-doped Ba0.67Sr0.33TiO3 thin film prepared by RF magnetron sputtering\",\"authors\":\"Zunping Xu, Xiaoyang Chen, Jianguo Zhu, D. Xiao, P. Yu\",\"doi\":\"10.1109/ISAF.2012.6297790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Mn/Y co-doped Ba<sub>0.67</sub>Sr<sub>0.33</sub>TiO<sub>3</sub> (Mn+Y: BST) thin films were deposited on LaNiO<sub>3</sub> (LNO)/SiO<sub>2</sub>/Si substrates by radio frequency (RF) magnetron sputtering at substrate temperature of 400 °C. Influence of the annealing temperature on microstructure and electrical properties of the Mn+Y: BST films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that all the films have dense and crack-free surface with a perovskite structure. The Mn+Y: BST films annealed at 700 °C showed the best electrical properties, with a dielectric constant of 875, dielectric loss of 0.032, tunability of 60% at room temperature and 100 kHz, and the leakage current density of 6.7×10<sup>-5</sup> A/cm<sup>2</sup> at an electric field of 400 kV/cm, respectively.\",\"PeriodicalId\":20497,\"journal\":{\"name\":\"Proceedings of ISAF-ECAPD-PFM 2012\",\"volume\":\"23 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of ISAF-ECAPD-PFM 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2012.6297790\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ISAF-ECAPD-PFM 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2012.6297790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
采用射频磁控溅射技术，在400℃的衬底温度下，在LaNiO3 (LNO)/SiO2/Si衬底上沉积了Mn/Y共掺杂Ba0.67Sr0.33TiO3 (Mn+Y: BST)薄膜。研究了退火温度对Mn+Y: BST薄膜微观结构和电性能的影响。x射线衍射(XRD)和扫描电镜(SEM)研究表明，所有薄膜表面致密且无裂纹，具有钙钛矿结构。经700℃退火的Mn+Y: BST薄膜电学性能最佳，介电常数为875，介电损耗为0.032，室温和100 kHz下的可调性为60%，400 kV/cm电场下的漏电流密度为6.7×10-5 a /cm2。
Influence of annealing temperature on properties of Mn/Y co-doped Ba0.67Sr0.33TiO3 thin film prepared by RF magnetron sputtering
Mn/Y co-doped Ba0.67Sr0.33TiO3 (Mn+Y: BST) thin films were deposited on LaNiO3 (LNO)/SiO2/Si substrates by radio frequency (RF) magnetron sputtering at substrate temperature of 400 °C. Influence of the annealing temperature on microstructure and electrical properties of the Mn+Y: BST films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that all the films have dense and crack-free surface with a perovskite structure. The Mn+Y: BST films annealed at 700 °C showed the best electrical properties, with a dielectric constant of 875, dielectric loss of 0.032, tunability of 60% at room temperature and 100 kHz, and the leakage current density of 6.7×10-5 A/cm2 at an electric field of 400 kV/cm, respectively.
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