85dB SFDR 67dB SNDR 8OSR 240MS/s ΔΣ非线性记忆误差校准ADC

Seung-Chul Lee, Brian Elies, Y. Chiu
{"title":"85dB SFDR 67dB SNDR 8OSR 240MS/s ΔΣ非线性记忆误差校准ADC","authors":"Seung-Chul Lee, Brian Elies, Y. Chiu","doi":"10.1109/VLSIC.2012.6243841","DOIUrl":null,"url":null,"abstract":"A 1-0 MASH ΔΣ ADC demonstrates a digital calibration technique treating both amplifier distortion and capacitor mismatch. The output-referred error analysis accurately models a nonlinear modulator. The identification of multiple error parameters is accomplished by correlating various moments of the ADC output with a one-bit pseudorandom noise (PN). The prototype ADC employing 29dB gain amplifiers measures 85dB SFDR and 67dB SNDR for a -1dBFS (1.1Vpp) 5MHz sinusoidal input at 240MS/s. The core ADC consumes 37mW from a 1.25V supply and occupies 0.28mm2 in a 65nm CMOS low-leakage digital process, in which the transistor threshold voltages are around 0.5V.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"An 85dB SFDR 67dB SNDR 8OSR 240MS/s ΔΣ ADC with nonlinear memory error calibration\",\"authors\":\"Seung-Chul Lee, Brian Elies, Y. Chiu\",\"doi\":\"10.1109/VLSIC.2012.6243841\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1-0 MASH ΔΣ ADC demonstrates a digital calibration technique treating both amplifier distortion and capacitor mismatch. The output-referred error analysis accurately models a nonlinear modulator. The identification of multiple error parameters is accomplished by correlating various moments of the ADC output with a one-bit pseudorandom noise (PN). The prototype ADC employing 29dB gain amplifiers measures 85dB SFDR and 67dB SNDR for a -1dBFS (1.1Vpp) 5MHz sinusoidal input at 240MS/s. The core ADC consumes 37mW from a 1.25V supply and occupies 0.28mm2 in a 65nm CMOS low-leakage digital process, in which the transistor threshold voltages are around 0.5V.\",\"PeriodicalId\":6347,\"journal\":{\"name\":\"2012 Symposium on VLSI Circuits (VLSIC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on VLSI Circuits (VLSIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2012.6243841\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Circuits (VLSIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2012.6243841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

1-0 MASH ΔΣ ADC演示了一种处理放大器失真和电容失配的数字校准技术。输出参考误差分析准确地模拟了非线性调制器。多个误差参数的识别是通过将ADC输出的各个矩与一位伪随机噪声(PN)相关联来完成的。采用29dB增益放大器的原型ADC在240MS/s的-1dBFS (1.1Vpp) 5MHz正弦输入下测量85dB的SFDR和67dB的SNDR。核心ADC在1.25V电源下消耗37mW,在晶体管阈值电压约为0.5V的65nm CMOS低漏数字工艺中占地0.28mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
An 85dB SFDR 67dB SNDR 8OSR 240MS/s ΔΣ ADC with nonlinear memory error calibration
A 1-0 MASH ΔΣ ADC demonstrates a digital calibration technique treating both amplifier distortion and capacitor mismatch. The output-referred error analysis accurately models a nonlinear modulator. The identification of multiple error parameters is accomplished by correlating various moments of the ADC output with a one-bit pseudorandom noise (PN). The prototype ADC employing 29dB gain amplifiers measures 85dB SFDR and 67dB SNDR for a -1dBFS (1.1Vpp) 5MHz sinusoidal input at 240MS/s. The core ADC consumes 37mW from a 1.25V supply and occupies 0.28mm2 in a 65nm CMOS low-leakage digital process, in which the transistor threshold voltages are around 0.5V.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 635pW battery voltage supervisory circuit for miniature sensor nodes A −70dBm-sensitivity 522Mbps 0.19nJ/bit-TX 0.43nJ/bit-RX transceiver for TransferJet™ SoC in 65nm CMOS A 21.5mW 10+Gb/s mm-Wave phased-array transmitter in 65nm CMOS Design of a 2.5-GHz, 3-ps jitter, 8-locking-cycle, all-digital delay-locked loop with cycle-by-cycle phase adjustment A sub-100µW multi-functional cardiac signal processor for mobile healthcare applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1