{"title":"FinFET中线晶圆片背面残留分析与减少","authors":"R. Mitra, A. Konuk","doi":"10.1109/ASMC49169.2020.9185280","DOIUrl":null,"url":null,"abstract":"This paper reports the analytical methods used to detect the composition of residue on back-side of wafer. Further it discusses impact of this back-side residue on front-side of wafer flatness and how this residue was reduced by a new developed clean.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"10 4 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Back-Side Residue Analyses and Reduction in FinFET Middle of Line Wafers\",\"authors\":\"R. Mitra, A. Konuk\",\"doi\":\"10.1109/ASMC49169.2020.9185280\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the analytical methods used to detect the composition of residue on back-side of wafer. Further it discusses impact of this back-side residue on front-side of wafer flatness and how this residue was reduced by a new developed clean.\",\"PeriodicalId\":6771,\"journal\":{\"name\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"10 4 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC49169.2020.9185280\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185280","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Back-Side Residue Analyses and Reduction in FinFET Middle of Line Wafers
This paper reports the analytical methods used to detect the composition of residue on back-side of wafer. Further it discusses impact of this back-side residue on front-side of wafer flatness and how this residue was reduced by a new developed clean.
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