液体介质中三维表面工程制备的邻近无表面活性剂硅纳米晶体中的载流子增殖。

V. Švrček, D. Mariotti, K. Matsubara, M. Kondo
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引用次数: 1

摘要

载流子在硅纳米晶体(Si-ncs)中的增殖,有望大大提高太阳能电池的转换效率,可以克服理论限制。由于分离的量子切割效应,Si-ncs的接近性是载流子倍增的重要因素。在本研究中,我们介绍了直接在水中进行Si-ncs三维表面工程的研究结果。因此,在不使用任何表面活性剂的情况下,可以接近Si-ncs。该方法是基于ns激光处理分散在液体溶液中的Si-ncs。我们研究了纳米激光加工制备和表面工程的Si-ncs的光致发光量子产率(发射光子数和吸收光子数之比)与激发波长的关系。我们的研究结果表明,激光处理引起的球形颗粒中硅纳米粒子的接近性也可能促进载流子的增殖。
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Carriers multiplication in neighboring surfactant-free silicon nanocrystals produced by 3D-surface engineering in liquid medium.
Carriers multiplication in silicon nanocrystals (Si-ncs) in a one promising eefect to considerably enhance conversion efficiency of solar cells that can overcome theoretical limits. A close proximity of Si-ncs is an essential factor for carrier multiplication due to the separated quantum cutting effect. In this study we present results on investigation of 3-dimensional (3D) surface engineering of Si-ncs directly in water. Thus at the same time allow close proximity Si-ncs without of using any surfactant. The approach is based on ns laser treatment of Si-ncs dispersed in liquid solution. We explore the excitation wavelength dependence of photoluminescence quantum yield (ratio of the number of emitted and absorbed photons) for Si-ncs as prepared and surface engineered by ns laser processing. Our results suggest that close proximity of Si-ncs in spherical particles induced by laser processing might enhance also carriers multiplication.
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