退火对REBaCuO和银层间插入氧化铈层的高温超导带的影响

Jean-Hughes Fournier-Lupien, C. Lacroix, J. Huh, J. Masse, J. Bellemare, F. Sirois
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引用次数: 4

摘要

摘要本文介绍了在超导体(GdBaCuO)和银层(Ag)之间添加氧化层(CeO x)以增加这两个导电层之间的界面电阻的HTS涂层导体样品的广泛的电学,微观结构和化学特性。这种界面阻力的增加是实现高温超导带中电流分流器(CFD)结构所必需的。本文中所有样品在氧气气氛中进行退火前后都进行了表征。退火的目的是为了减少由CeO x层产生的界面阻力,以获得适合CFD架构的值。制备了0、10、35、100 nm不同厚度的CeO x样品,并对其进行了表征。测量了超导层的临界电流和临界温度,并用透射电子显微镜(TEM)和能量色散x射线能谱仪(EDS)监测了退火过程的影响。结果表明,在450℃退火后,厚层(≥35 nm)的cex样品的超导层明显退化,根据EDS结果,超导层中钡的数量减少,这可以解释所观察到的临界电流降低。
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Effect of Annealing on HTS Tapes With a Cerium Oxide Layer Inserted Between the REBaCuO and Silver Layers
Abstract This paper presents extensive electrical, microstructural and chemical characterizations of HTS coated conductor samples in which an oxide layer (CeO x ) has been added between the superconductor (GdBaCuO) and the silver (Ag) layers, in an attempt to increase the interfacial resistance between these two conductive layers. This increase of interfacial resistance is required to realize the current flow diverter (CFD) architecture in HTS tapes. All samples in this paper have been characterized before and after performing an annealing in oxygen atmosphere. The purpose of the annealing was to reduce the interfacial resistance generated by the CeO x layer, in order to achieve a proper value for the CFD architecture. Samples with different thicknesses of CeO x , namely 0, 10, 35 and 100 nm, have been produced and characterized. The critical current and the critical temperature have been measured to determine the quality of the superconducting layers, while cross-section transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS) have been used to monitor the impact of the annealing. The results show a clear degradation of the superconducting layer for samples with a thick layer ( ≥ 35  nm) of CeO x after annealing at 450  o C. According to the EDS results, a reduction of the amount of barium is observed in the superconducting layer, which could explain the observed reduction of the critical current.
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