基于CMOS工艺的网格式上电极电容式聚酰亚胺湿度传感器

电子器件 Pub Date : 2011-06-20 DOI:10.3969/J.ISSN.1005-9490.2011.03.002

Shui-Ying Jia, Jian-hong Yang, Hong Xie, Xue‐yuan Cai, Cheng-Long Wu

{"title":"基于CMOS工艺的网格式上电极电容式聚酰亚胺湿度传感器","authors":"Shui-Ying Jia, Jian-hong Yang, Hong Xie, Xue‐yuan Cai, Cheng-Long Wu","doi":"10.3969/J.ISSN.1005-9490.2011.03.002","DOIUrl":null,"url":null,"abstract":"A grid-type upper electrode capacitive polyimide humidity sensor fabricated by standard CMOS process was reported. The humidity sensor uses polyimide thin film as humidity-sensitive layer, and aluminum as upper electrode and lower electrode. Details of device structure, fabrication process and sensor characteristics such as sensitivity, hysteresis, and response time are discussed. Test results show that the capacitance-RH curves have reasonable linearity in the range of 12% and 92%, the sensitivity is 0.9 pF/RH, and the response time is about 5.5 s.","PeriodicalId":10074,"journal":{"name":"电子器件","volume":"6 1","pages":"242-246"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Capacitive Polyimide Humidity Sensor with Grid-Type Upper Electrode by CMOS Process\",\"authors\":\"Shui-Ying Jia, Jian-hong Yang, Hong Xie, Xue‐yuan Cai, Cheng-Long Wu\",\"doi\":\"10.3969/J.ISSN.1005-9490.2011.03.002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A grid-type upper electrode capacitive polyimide humidity sensor fabricated by standard CMOS process was reported. The humidity sensor uses polyimide thin film as humidity-sensitive layer, and aluminum as upper electrode and lower electrode. Details of device structure, fabrication process and sensor characteristics such as sensitivity, hysteresis, and response time are discussed. Test results show that the capacitance-RH curves have reasonable linearity in the range of 12% and 92%, the sensitivity is 0.9 pF/RH, and the response time is about 5.5 s.\",\"PeriodicalId\":10074,\"journal\":{\"name\":\"电子器件\",\"volume\":\"6 1\",\"pages\":\"242-246\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"电子器件\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.3969/J.ISSN.1005-9490.2011.03.002\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"电子器件","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.3969/J.ISSN.1005-9490.2011.03.002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

报道了一种采用标准CMOS工艺制作的栅格式上电极电容式聚酰亚胺湿度传感器。湿度传感器采用聚酰亚胺薄膜作为湿敏层，铝作为上电极和下电极。详细讨论了器件结构、制造工艺和传感器特性，如灵敏度、迟滞和响应时间。测试结果表明，电容-RH曲线在12%和92%范围内具有合理的线性关系，灵敏度为0.9 pF/RH，响应时间约为5.5 s。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A Capacitive Polyimide Humidity Sensor with Grid-Type Upper Electrode by CMOS Process

A grid-type upper electrode capacitive polyimide humidity sensor fabricated by standard CMOS process was reported. The humidity sensor uses polyimide thin film as humidity-sensitive layer, and aluminum as upper electrode and lower electrode. Details of device structure, fabrication process and sensor characteristics such as sensitivity, hysteresis, and response time are discussed. Test results show that the capacitance-RH curves have reasonable linearity in the range of 12% and 92%, the sensitivity is 0.9 pF/RH, and the response time is about 5.5 s.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊