Manoj Kumar, A. Bansal, K. Aditya, Charu Gupta, Anshul Gupta, A. Dixit
{"title":"考虑晶格温度的纳米线场效应管直流自热物理模型","authors":"Manoj Kumar, A. Bansal, K. Aditya, Charu Gupta, Anshul Gupta, A. Dixit","doi":"10.1109/icee44586.2018.8937983","DOIUrl":null,"url":null,"abstract":"In this paper, a unified physics based 2-D analytical model for DC self-heating in Nanowire-FET is presented for the first time. The carrier and lattice-temperatures are considered in the model to include the effect of self-heating in Nanowire-FET. The model uses superposition approach to solve 2-D Poisson’s equation capturing the electrostatic potential of the device while the energy balance equation and temperature dependent mobility equation captures the effect of increased lattice temperature. By obtaining a good agreement with calibrated 3-D Sentaurus-TCAD electro-thermal simulations, the accuracy of the developed model is validated.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Physics Based Model for DC Self-Heating in Nanowire-FET Considering Lattice Temperature\",\"authors\":\"Manoj Kumar, A. Bansal, K. Aditya, Charu Gupta, Anshul Gupta, A. Dixit\",\"doi\":\"10.1109/icee44586.2018.8937983\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a unified physics based 2-D analytical model for DC self-heating in Nanowire-FET is presented for the first time. The carrier and lattice-temperatures are considered in the model to include the effect of self-heating in Nanowire-FET. The model uses superposition approach to solve 2-D Poisson’s equation capturing the electrostatic potential of the device while the energy balance equation and temperature dependent mobility equation captures the effect of increased lattice temperature. By obtaining a good agreement with calibrated 3-D Sentaurus-TCAD electro-thermal simulations, the accuracy of the developed model is validated.\",\"PeriodicalId\":6590,\"journal\":{\"name\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"1 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 4th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee44586.2018.8937983\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8937983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Physics Based Model for DC Self-Heating in Nanowire-FET Considering Lattice Temperature
In this paper, a unified physics based 2-D analytical model for DC self-heating in Nanowire-FET is presented for the first time. The carrier and lattice-temperatures are considered in the model to include the effect of self-heating in Nanowire-FET. The model uses superposition approach to solve 2-D Poisson’s equation capturing the electrostatic potential of the device while the energy balance equation and temperature dependent mobility equation captures the effect of increased lattice temperature. By obtaining a good agreement with calibrated 3-D Sentaurus-TCAD electro-thermal simulations, the accuracy of the developed model is validated.