{"title":"砷化镉中的Righi - Leduc效应","authors":"D. Lovett, D. Ballentyne","doi":"10.1088/0508-3443/18/10/304","DOIUrl":null,"url":null,"abstract":"Cadmium arsenide has a large concentration of high-mobility carriers (electrons) and possesses a small lattice thermal conductivity. It should therefore exhibit a large Righi-Leduc effect. This effect has been measured in the temperature range 300-64°K in magnetic fields of 500-12 × 103 Oe and results shown to agree with predicted values for a degenerate semiconductor. Values of the Righi-Leduc co-efficient of 066 × 104 cm2 v-1 sec-1 at room temperature and 14 × 104 cm2 v-1 sec-1 at 85°K have been obtained in low magnetic fields.","PeriodicalId":9350,"journal":{"name":"British Journal of Applied Physics","volume":"19 1","pages":"1399-1402"},"PeriodicalIF":0.0000,"publicationDate":"1967-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"The Righi - Leduc effect in cadmium arsenide\",\"authors\":\"D. Lovett, D. Ballentyne\",\"doi\":\"10.1088/0508-3443/18/10/304\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cadmium arsenide has a large concentration of high-mobility carriers (electrons) and possesses a small lattice thermal conductivity. It should therefore exhibit a large Righi-Leduc effect. This effect has been measured in the temperature range 300-64°K in magnetic fields of 500-12 × 103 Oe and results shown to agree with predicted values for a degenerate semiconductor. Values of the Righi-Leduc co-efficient of 066 × 104 cm2 v-1 sec-1 at room temperature and 14 × 104 cm2 v-1 sec-1 at 85°K have been obtained in low magnetic fields.\",\"PeriodicalId\":9350,\"journal\":{\"name\":\"British Journal of Applied Physics\",\"volume\":\"19 1\",\"pages\":\"1399-1402\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1967-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"British Journal of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/0508-3443/18/10/304\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"British Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0508-3443/18/10/304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cadmium arsenide has a large concentration of high-mobility carriers (electrons) and possesses a small lattice thermal conductivity. It should therefore exhibit a large Righi-Leduc effect. This effect has been measured in the temperature range 300-64°K in magnetic fields of 500-12 × 103 Oe and results shown to agree with predicted values for a degenerate semiconductor. Values of the Righi-Leduc co-efficient of 066 × 104 cm2 v-1 sec-1 at room temperature and 14 × 104 cm2 v-1 sec-1 at 85°K have been obtained in low magnetic fields.
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