Yuxiao Fang, W. Y. Xu, I. Mitrovic, Li Yang, Chun Zhao, Cezhou Zhao
{"title":"一种环境友好的溶液处理ZrLaO栅极介质，适用于恶劣辐射环境下的大面积应用","authors":"Yuxiao Fang, W. Y. Xu, I. Mitrovic, Li Yang, Chun Zhao, Cezhou Zhao","doi":"10.1109/ICICDT51558.2021.9626540","DOIUrl":null,"url":null,"abstract":"In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrO<inf>x</inf> could suppress the formation of V<inf>o</inf> and improve the InO<inf>x</inf>/ZrLaO interface. The Zr<inf>0.9</inf>La<inf>0.1</inf>O<inf>y</inf> thin films remained stable under 144 krad (SiO<inf>2</inf>) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InO<inf>x</inf>/Zr<inf>0.9</inf>La<inf>0.1</inf>O<inf>y</inf> TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO<inf>2</inf>) irradiation.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"85 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment\",\"authors\":\"Yuxiao Fang, W. Y. Xu, I. Mitrovic, Li Yang, Chun Zhao, Cezhou Zhao\",\"doi\":\"10.1109/ICICDT51558.2021.9626540\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrO<inf>x</inf> could suppress the formation of V<inf>o</inf> and improve the InO<inf>x</inf>/ZrLaO interface. The Zr<inf>0.9</inf>La<inf>0.1</inf>O<inf>y</inf> thin films remained stable under 144 krad (SiO<inf>2</inf>) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InO<inf>x</inf>/Zr<inf>0.9</inf>La<inf>0.1</inf>O<inf>y</inf> TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO<inf>2</inf>) irradiation.\",\"PeriodicalId\":6737,\"journal\":{\"name\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"volume\":\"85 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT51558.2021.9626540\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT51558.2021.9626540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment
In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrOx could suppress the formation of Vo and improve the InOx/ZrLaO interface. The Zr0.9La0.1Oy thin films remained stable under 144 krad (SiO2) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InOx/Zr0.9La0.1Oy TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO2) irradiation.
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