在不同衬底上生长的Y-Ba-Cu-O薄膜的微波特性和应用

Sang Young Lee , J.H. Suh , O.K. Kwon , J.Y. Cho , B.H. Park , J.H. Lee , V.A. Komashko , Y.H. Kim , T.S. Hahn , B. Oh , H.T. Kim , Hu-Jong Lee
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引用次数: 3

摘要

用微带环形谐振器研究了生长在(100)LaAlO3 (LAO)、(110)NdGaO3 (NGO)和(001)SrLaAlO4 (SLAO)衬底上的YBa2Cu3O7-δ (YBCO)薄膜在20 K以上温度下的微波特性。在SLAO衬底上制备的YBCO谐振腔的微波性能优于或可与其他在LAO衬底上制备的YBCO谐振腔相媲美。对于在LAO和SLAO衬底上的YBCO谐振腔,QU和f0都随着温度的升高而降低。同时,NGO衬底上的谐振器表现出不同的行为,其中QU在~ 70 K处出现峰值,这归因于NGO衬底损耗正切的独特温度依赖性。制备了一个带YBCO环形谐振腔的x波段振荡器,并对其低温特性进行了研究。振荡器信号的频率从30 K时的7.925 GHz变化到77 K时的7.878 GHz,这主要归因于YBCO环形谐振器的f0的变化。信号功率在30k和77k时分别大于4.5 mW和2.1 mW。在55 K时,振荡器信号频率为7.917 GHz, 3 db线宽为450 Hz。
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Microwave properties and applications of Y–Ba–Cu–O thin films grown on various substrates

Microwave properties of YBa2Cu3O7-δ (YBCO) films grown on (100) LaAlO3 (LAO), (110) NdGaO3 (NGO) and (001) SrLaAlO4 (SLAO) substrates were studied in the form of a microstrip ring resonator at temperatures above 20 K. The YBCO resonator on a SLAO substrate showed microwave properties better than or comparable to other YBCO resonators on LAO substrates. For the YBCO resonators on LAO and SLAO substrates, both QU and f0 appeared to decrease as the temperature was raised. Meanwhile the resonator on a NGO substrate showed different behaviors with QU showing a peak at ∼70 K, which are attributed to the unique temperature dependence of the loss tangent of the NGO substrate. An X-band oscillator with a YBCO ring resonator coupled to the circuit was prepared and its properties were investigated at low temperatures. The frequency of the oscillator signal appeared to change from 7.925 GHz at 30 K to 7.878 GHz at 77 K, which was mostly attributed to the change in f0 of the YBCO ring resonator. The signal power appeared to be more than 4.5 mW at 30 K and 2.1 mW at 77 K, respectively. At 55 K, the frequency of the oscillator signal was 7.917 GHz with the 3 dB-linewidth of 450 Hz.

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