{"title":"使用超薄硅界面控制层的钝化技术用于空气暴露的InGaAs表面","authors":"H. Hasegawa, M. Akazawa, E. Ohue","doi":"10.1109/ICIPRM.1991.147454","DOIUrl":null,"url":null,"abstract":"The growth of a surface passivation structure for In/sub 0.53/Ga/sub 0.47/As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO/sub 2/ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"101 1","pages":"630-633"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Passivation technology using an ultrathin Si interface control layer for air-exposed InGaAs surfaces\",\"authors\":\"H. Hasegawa, M. Akazawa, E. Ohue\",\"doi\":\"10.1109/ICIPRM.1991.147454\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of a surface passivation structure for In/sub 0.53/Ga/sub 0.47/As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO/sub 2/ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"101 1\",\"pages\":\"630-633\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147454\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147454","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Passivation technology using an ultrathin Si interface control layer for air-exposed InGaAs surfaces
The growth of a surface passivation structure for In/sub 0.53/Ga/sub 0.47/As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO/sub 2/ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces.<>
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