{"title":"SiC晶体生长数值计算的新进展","authors":"K. Kakimoto, S. Nakano","doi":"10.3131/JVSJ2.60.313","DOIUrl":null,"url":null,"abstract":"The eŠect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (Cor Siface 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4HSiC was more stable than that of 6HSiC when a grown crystal was doped with nitrogen using Cface 4Hand 6HSiC as seed crystals. In contrast, formation of 6HSiC was favored over 4HSiC when Siface 4Hand 6H SiC seed crystals were used. Meanwhile, the formation of 4HSiC was more stable than that of 6HSiC when aluminum was the dopant and Cand Sifaces of 6HSiC were used as seed crystals. 6HSiC was preferred to grow rather than 4HSiC in the cases of C and Sifaces of 4HSiC as seed crystals.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Recent developments of numerical calculation in crystal growth of SiC\",\"authors\":\"K. Kakimoto, S. Nakano\",\"doi\":\"10.3131/JVSJ2.60.313\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The eŠect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (Cor Siface 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4HSiC was more stable than that of 6HSiC when a grown crystal was doped with nitrogen using Cface 4Hand 6HSiC as seed crystals. In contrast, formation of 6HSiC was favored over 4HSiC when Siface 4Hand 6H SiC seed crystals were used. Meanwhile, the formation of 4HSiC was more stable than that of 6HSiC when aluminum was the dopant and Cand Sifaces of 6HSiC were used as seed crystals. 6HSiC was preferred to grow rather than 4HSiC in the cases of C and Sifaces of 4HSiC as seed crystals.\",\"PeriodicalId\":17344,\"journal\":{\"name\":\"Journal of The Vacuum Society of Japan\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of The Vacuum Society of Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3131/JVSJ2.60.313\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Vacuum Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3131/JVSJ2.60.313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recent developments of numerical calculation in crystal growth of SiC
The eŠect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (Cor Siface 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4HSiC was more stable than that of 6HSiC when a grown crystal was doped with nitrogen using Cface 4Hand 6HSiC as seed crystals. In contrast, formation of 6HSiC was favored over 4HSiC when Siface 4Hand 6H SiC seed crystals were used. Meanwhile, the formation of 4HSiC was more stable than that of 6HSiC when aluminum was the dopant and Cand Sifaces of 6HSiC were used as seed crystals. 6HSiC was preferred to grow rather than 4HSiC in the cases of C and Sifaces of 4HSiC as seed crystals.