H. Teyssèdre, F. Delachat, Jonas Khan, J. Reche, Manuela Stirner, Peter Ledel
{"title":"通过线条粗糙度提取的纳米压印监视器的重复性","authors":"H. Teyssèdre, F. Delachat, Jonas Khan, J. Reche, Manuela Stirner, Peter Ledel","doi":"10.1109/ASMC49169.2020.9185377","DOIUrl":null,"url":null,"abstract":"In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeatability and uniformity in term of critical dimension (CD) and advanced rules-based have been proposed [2],[3]. Based on this progress, this paper will focus on line width roughness (LWR) and line edge roughness (LER) extraction as a new metric to monitor quality of imprint. Evolution of these metrics are studied to provide information on stability of the imprint process.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"100 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Repeatability of Nanoimprint Lithography Monitor Through Line Roughness Extraction\",\"authors\":\"H. Teyssèdre, F. Delachat, Jonas Khan, J. Reche, Manuela Stirner, Peter Ledel\",\"doi\":\"10.1109/ASMC49169.2020.9185377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeatability and uniformity in term of critical dimension (CD) and advanced rules-based have been proposed [2],[3]. Based on this progress, this paper will focus on line width roughness (LWR) and line edge roughness (LER) extraction as a new metric to monitor quality of imprint. Evolution of these metrics are studied to provide information on stability of the imprint process.\",\"PeriodicalId\":6771,\"journal\":{\"name\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"100 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC49169.2020.9185377\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Repeatability of Nanoimprint Lithography Monitor Through Line Roughness Extraction
In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeatability and uniformity in term of critical dimension (CD) and advanced rules-based have been proposed [2],[3]. Based on this progress, this paper will focus on line width roughness (LWR) and line edge roughness (LER) extraction as a new metric to monitor quality of imprint. Evolution of these metrics are studied to provide information on stability of the imprint process.