通过线条粗糙度提取的纳米压印监视器的重复性

H. Teyssèdre, F. Delachat, Jonas Khan, J. Reche, Manuela Stirner, Peter Ledel
{"title":"通过线条粗糙度提取的纳米压印监视器的重复性","authors":"H. Teyssèdre, F. Delachat, Jonas Khan, J. Reche, Manuela Stirner, Peter Ledel","doi":"10.1109/ASMC49169.2020.9185377","DOIUrl":null,"url":null,"abstract":"In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeatability and uniformity in term of critical dimension (CD) and advanced rules-based have been proposed [2],[3]. Based on this progress, this paper will focus on line width roughness (LWR) and line edge roughness (LER) extraction as a new metric to monitor quality of imprint. Evolution of these metrics are studied to provide information on stability of the imprint process.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"100 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Repeatability of Nanoimprint Lithography Monitor Through Line Roughness Extraction\",\"authors\":\"H. Teyssèdre, F. Delachat, Jonas Khan, J. Reche, Manuela Stirner, Peter Ledel\",\"doi\":\"10.1109/ASMC49169.2020.9185377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeatability and uniformity in term of critical dimension (CD) and advanced rules-based have been proposed [2],[3]. Based on this progress, this paper will focus on line width roughness (LWR) and line edge roughness (LER) extraction as a new metric to monitor quality of imprint. Evolution of these metrics are studied to provide information on stability of the imprint process.\",\"PeriodicalId\":6771,\"journal\":{\"name\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"100 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC49169.2020.9185377\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

二十年来,随之而来的技术发展使得软印纳米压印技术(NIL)成熟到可以大批量生产[1]。如今,EVG的最新技术和材料在关键尺寸(CD)方面显示出高度的重复性和均匀性,并提出了先进的基于规则的方法[2],[3]。在此基础上,本文将重点研究线条宽度粗糙度(LWR)和线条边缘粗糙度(LER)提取作为一种新的印痕质量监测指标。研究了这些指标的演变,以提供压印工艺稳定性的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Repeatability of Nanoimprint Lithography Monitor Through Line Roughness Extraction
In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeatability and uniformity in term of critical dimension (CD) and advanced rules-based have been proposed [2],[3]. Based on this progress, this paper will focus on line width roughness (LWR) and line edge roughness (LER) extraction as a new metric to monitor quality of imprint. Evolution of these metrics are studied to provide information on stability of the imprint process.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Systematic Missing Pattern Defects Introduced by Topcoat Change at PC Lithography: A Case Study in the Tandem Usage of Inspection Methods Computational Process Control Compatible Dimensional Metrology Tool: Through-focus Scanning Optical Microscopy Characterization of Sub-micron Metal Line Arrays Using Picosecond Ultrasonics An Artificial Neural Network Based Algorithm For Real Time Dispatching Decisions A Framework for Semi-Automated Fault Detection Configuration with Automated Feature Extraction and Limits Setting
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1