J. Mateos, J. Millithaler, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, Yasaman Alimi, L. Zhang, A. Rezazadeh, A. Song, P. Sangaré, G. Ducournau, C. Gaquière, A. Westlund, J. Grahn
{"title":"半导体纳米器件的室温太赫兹探测与发射","authors":"J. Mateos, J. Millithaler, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, Yasaman Alimi, L. Zhang, A. Rezazadeh, A. Song, P. Sangaré, G. Ducournau, C. Gaquière, A. Westlund, J. Grahn","doi":"10.1109/CDE.2013.6481381","DOIUrl":null,"url":null,"abstract":"In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"34 1","pages":"215-218"},"PeriodicalIF":0.0000,"publicationDate":"2013-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Room temperature THz detection and emission with semiconductor nanodevices\",\"authors\":\"J. Mateos, J. Millithaler, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, Yasaman Alimi, L. Zhang, A. Rezazadeh, A. Song, P. Sangaré, G. Ducournau, C. Gaquière, A. Westlund, J. Grahn\",\"doi\":\"10.1109/CDE.2013.6481381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.\",\"PeriodicalId\":6614,\"journal\":{\"name\":\"2013 Spanish Conference on Electron Devices\",\"volume\":\"34 1\",\"pages\":\"215-218\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2013.6481381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Room temperature THz detection and emission with semiconductor nanodevices
In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise of detectors at THz frequencies.