A Ballistic Transport Study for Advanced Transistors in Post-Moore Era: Parasitic Resistance, Self-heating and Cryogenic Analysis

In this work, we investigate the carrier ballistic transport characteristics from the perspective of self-heating effect (SHE), parasitic resistance, aging-induced traps and the cryogenic applications, for transistors with advanced structures and novel channel materials. As the SHE in the devices could be effectively eliminated by fast measurement, circuit-speed device transport characteristics could be accurately extracted. The large parasitic resistance in nanoscale transistors also affects the device transport behavior. Furthermore, for the future quantum-CMOS integration, the ballistic parameter extraction for the FinFETs was also performed to provide the relevant design parameter at the cryogenic environment.