ZVS电压模式d类放大器，eGaN®fet支持拓扑结构，用于高谐振无线能量传输

Conference proceedings. IEEE Applied Power Electronics Conference and Exposition Pub Date : 2015-03-15 DOI:10.1109/APEC.2015.7104562

M. D. Rooij

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引用次数: 20

摘要

在过去几年中，工作在6.78 MHz的高谐振、松耦合、无线能量传输系统的普及程度急剧增加。在本文中，我们提出了零电压开关(ZVS)电压模式的D类放大器拓扑结构，并使用eGaN fet评估了其作为A4WP 3类兼容放大器的性能，并将其性能与mosfet进行了比较。实验验证表明，ZVS D类放大器可以固有地驱动从+20j Ω到- 30j Ω和1.7 Ω到57 Ω的反射负载阻抗范围，同时保持A4WP 3级的一致性，这比迄今为止探索的任何其他拓扑都要宽得多。研究发现，eGaN FET放大器的损耗比MOSFET低30%，当向负载输出16 W时，其工作温度可降低17°C。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The ZVS voltage-mode class-D amplifier, an eGaN® FET-enabled topology for highly resonant wireless energy transfer

The popularity of highly resonant, loosely coupled, wireless energy transfer systems operating at 6.78 MHz has increased dramatically over the last few years. In this paper we present the zero voltage switching (ZVS) voltage mode class D amplifier topology and evaluate its performance as a suitable A4WP Class-3 compliant amplifier using eGaN FETs and compare the performance with MOSFETs. Experimental verification has revealed that the ZVS class D amplifier can inherently drive a reflected load impedance range from +20j Ω though −30j Ω and 1.7 Ω through 57 Ω while maintaining A4WP Class-3 compliance, which is a significantly wider range than any other topology explored as of this date. The eGaN FET based amplifier was found to have 30 % lower losses and operate as much as 17°C cooler when delivering 16 W into the load than a MOSFET version.

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Conference proceedings. IEEE Applied Power Electronics Conference and Exposition

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