E. Miranda, J. Suñé, T. Kawanago, K. Kakushima, H. Iwai
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Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors
A simple analytic model for the post-breakdown conduction characteristics in W/La2O3/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (IG) as a function of the gate (VG) and drain (VD) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.
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