S. Lourdudoss, S. Nilsson, L. Backbom, T. Klinga, O. Kjebon, B. Holmberg
{"title":"反应离子刻蚀制备的半绝缘InP:Fe衬底激光平台周围的氢化物VPE再生","authors":"S. Lourdudoss, S. Nilsson, L. Backbom, T. Klinga, O. Kjebon, B. Holmberg","doi":"10.1109/ICIPRM.1991.147423","DOIUrl":null,"url":null,"abstract":"The regrowth of SI-InP:Fe by hydride vapor-phase epitaxy (HVPE) around reactive-ion-etched (RIE) vertical mesas of lasers grown on Zn-doped p-InP substrate is described. The laser performance measurements show that at 20 degrees C, the DC and pulsed power saturation currents are 300 mA and >600 mA, or 20 and >40 times the threshold current, respectively. The characteristic temperature is 63 K. It is inferred that the overall performance can be improved by minimizing the actual series resistance of 5.6 Omega . The regrown SI-InP:Fe is highly current blocking despite its adjacency to InP:Zn substrate.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"30 1","pages":"504-506"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Semi-insulating InP:Fe regrowth by hydride VPE around P-InP substrate laser mesas fabricated by reactive ion etching\",\"authors\":\"S. Lourdudoss, S. Nilsson, L. Backbom, T. Klinga, O. Kjebon, B. Holmberg\",\"doi\":\"10.1109/ICIPRM.1991.147423\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The regrowth of SI-InP:Fe by hydride vapor-phase epitaxy (HVPE) around reactive-ion-etched (RIE) vertical mesas of lasers grown on Zn-doped p-InP substrate is described. The laser performance measurements show that at 20 degrees C, the DC and pulsed power saturation currents are 300 mA and >600 mA, or 20 and >40 times the threshold current, respectively. The characteristic temperature is 63 K. It is inferred that the overall performance can be improved by minimizing the actual series resistance of 5.6 Omega . The regrown SI-InP:Fe is highly current blocking despite its adjacency to InP:Zn substrate.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"30 1\",\"pages\":\"504-506\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147423\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147423","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Semi-insulating InP:Fe regrowth by hydride VPE around P-InP substrate laser mesas fabricated by reactive ion etching
The regrowth of SI-InP:Fe by hydride vapor-phase epitaxy (HVPE) around reactive-ion-etched (RIE) vertical mesas of lasers grown on Zn-doped p-InP substrate is described. The laser performance measurements show that at 20 degrees C, the DC and pulsed power saturation currents are 300 mA and >600 mA, or 20 and >40 times the threshold current, respectively. The characteristic temperature is 63 K. It is inferred that the overall performance can be improved by minimizing the actual series resistance of 5.6 Omega . The regrown SI-InP:Fe is highly current blocking despite its adjacency to InP:Zn substrate.<>
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