{"title":"在射频激发辉光放电中钽和铝的可控氧化","authors":"P. L. Worledge, D. White","doi":"10.1088/0508-3443/18/9/418","DOIUrl":null,"url":null,"abstract":"A controlled method of oxidizing thin films of tantalum and aluminium in a radio-frequency-excited glow discharge is described. The oxide films have been assessed as the dielectric in metal-metal-oxide-metal capacitor structures. Reciprocal capacitance varies linearly with the voltage applied to the metal film in the discharge over the range 0 to 48 v. The process is similar to but less efficient than anodization in a liquid electrolyte. Compared with oxide films formed by liquid anodization the electrical properties are poor, probably because of the more energetic conditions in the discharge.","PeriodicalId":9350,"journal":{"name":"British Journal of Applied Physics","volume":"67 1","pages":"1337-1339"},"PeriodicalIF":0.0000,"publicationDate":"1967-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Controlled oxidation of tantalum and aluminium in a radio-frequency-excited glow discharge\",\"authors\":\"P. L. Worledge, D. White\",\"doi\":\"10.1088/0508-3443/18/9/418\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A controlled method of oxidizing thin films of tantalum and aluminium in a radio-frequency-excited glow discharge is described. The oxide films have been assessed as the dielectric in metal-metal-oxide-metal capacitor structures. Reciprocal capacitance varies linearly with the voltage applied to the metal film in the discharge over the range 0 to 48 v. The process is similar to but less efficient than anodization in a liquid electrolyte. Compared with oxide films formed by liquid anodization the electrical properties are poor, probably because of the more energetic conditions in the discharge.\",\"PeriodicalId\":9350,\"journal\":{\"name\":\"British Journal of Applied Physics\",\"volume\":\"67 1\",\"pages\":\"1337-1339\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1967-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"British Journal of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/0508-3443/18/9/418\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"British Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0508-3443/18/9/418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Controlled oxidation of tantalum and aluminium in a radio-frequency-excited glow discharge
A controlled method of oxidizing thin films of tantalum and aluminium in a radio-frequency-excited glow discharge is described. The oxide films have been assessed as the dielectric in metal-metal-oxide-metal capacitor structures. Reciprocal capacitance varies linearly with the voltage applied to the metal film in the discharge over the range 0 to 48 v. The process is similar to but less efficient than anodization in a liquid electrolyte. Compared with oxide films formed by liquid anodization the electrical properties are poor, probably because of the more energetic conditions in the discharge.