Effect of Antisolvent Method on the Performance of HOIP based Memristive Devices

This paper presents a hybrid organic inorganic perovskite based memristive device having a structure that is commonly used for solar cells. Toluene is used as antisolvent during perovskite layer coating and its effect on the memristive device performance is studied in this report. It has been found that the antisolvent improves the morphology of the perovskite film. With this method, we obtained non-reversible resistive switching in the device with an on/off ratio of 104. This device also shows a reversible resistance switching with a set voltage of 0.5 V and a reset voltage of -0.9 V, measured at a sweep rate of 1 mV/s. The fabricated memory device shows promising performance and could be used as a non-volatile memory device for low power consuming applications.