改进的HNA各向同性刻蚀,用于粗糙度<10 nm的大规模高对称环形硅模具

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2019-10-01 DOI:10.1117/1.JMM.18.4.044501
Zesen Bai, Yinpeng Wang, Qiancheng Zhao, Zhenchuan Yang, J. Cui, G. Yan
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引用次数: 2

摘要

摘要微系统技术非常适合批量制造微半球谐振陀螺仪(HRG),以降低成本和体积。在微hrg的加工中,获得具有大规模、高对称性和光滑表面的三维半球形模具是一个关键步骤。与半球形谐振器相比,在相同加工精度下,环形谐振器具有更小的频率分裂和更大的有效共振质量。提出了一种基于深度反应离子刻蚀和改进的HNA各向同性刻蚀的环形谐振腔模具晶圆级刻蚀方法。该方法具有成本低、节省时间、操作方便等优点。利用该方法成功制备出平均直径超过1900 μm、不对称度< 0.2%、粗糙度<10 nm的环形模具。模具的均匀性和表面光洁度主要由海航蚀刻工艺参数决定。为了优化各向同性刻蚀参数,我们进行了一系列的对照实验,包括掩膜设计、镀液搅拌、HNA成分和温度。讨论了这些参数对刻蚀速率和均匀性的影响。结果表明:2.5:7:1 (HF: HNO3: CH3COOH)的组成、30℃的温度、20转/ min的搅拌是获得高性能模具的最佳蚀刻条件。
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Improved HNA isotropic etching for large-scale highly symmetric toroidal silicon molds with <10-nm roughness
Abstract. Microsystem technology is well suited to batch fabricate microhemispherical resonator gyroscopes (HRG) to reduce cost and volume. In the processing of micro-HRG, a crucial step is to get a 3-D hemispherical mold with the large-scale, high-symmetry, and smooth surface. Compared with the hemispherical resonator, the toroidal resonator has the smaller frequency split and larger effective resonance mass under the same processing accuracy. A wafer-scale etching method for the toroidal resonator mold was presented, which is based on the deep reactive ion etching and improved HNA isotropic etching. The advantages of this method include low cost, time savings, and easy operation. With this method, toroidal molds with an average diameter over 1900  μm, asymmetry <0.2  %  , and roughness <10  nm were successfully fabricated. The uniformity and surface smoothness of the molds are mainly determined by the parameters of HNA etching. A series of controlled experiments were conducted to optimize isotropic etching parameters that include mask design, bath agitation, HNA composition, and temperature. The influence of these parameters on etching rate and uniformity was discussed. The result shows that the composition of 2.5:7:1 (HF  :  HNO3  :  CH3COOH), temperature of 30°C, and bath agitation of 20 revolutions per minute are optimal etching conditions to achieve high-performance molds.
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来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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