{"title":"InP表面处理的光谱光致发光和拉曼研究","authors":"B. Bollig, R. Iyer, D. Lile","doi":"10.1109/ICIPRM.1991.147437","DOIUrl":null,"url":null,"abstract":"Results of photoluminescence (PL) and Raman spectroscopy measurements on the effects of different chemical and thermal treatments on the surface properties of InP are presented. From the Raman spectra, values of the surface potential and depletion width are calculated, which allow values of surface recombination velocity to be extracted from the PL data. The PL data provide unambiguous confirmation of the degradation of the unprotected InP surface at temperatures over 200 degrees C.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spectral photoluminescence and Raman investigations of surface treatments on InP\",\"authors\":\"B. Bollig, R. Iyer, D. Lile\",\"doi\":\"10.1109/ICIPRM.1991.147437\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Results of photoluminescence (PL) and Raman spectroscopy measurements on the effects of different chemical and thermal treatments on the surface properties of InP are presented. From the Raman spectra, values of the surface potential and depletion width are calculated, which allow values of surface recombination velocity to be extracted from the PL data. The PL data provide unambiguous confirmation of the degradation of the unprotected InP surface at temperatures over 200 degrees C.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147437\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Spectral photoluminescence and Raman investigations of surface treatments on InP
Results of photoluminescence (PL) and Raman spectroscopy measurements on the effects of different chemical and thermal treatments on the surface properties of InP are presented. From the Raman spectra, values of the surface potential and depletion width are calculated, which allow values of surface recombination velocity to be extracted from the PL data. The PL data provide unambiguous confirmation of the degradation of the unprotected InP surface at temperatures over 200 degrees C.<>
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