{"title":"无掺杂异质结带内隧道(HIBT)场效应管具有低漏极诱导势垒降低/稀释(DIBL/T)和低关断电流变化","authors":"S. Gupta, J. Kulkarni, S. Datta, K. Roy","doi":"10.1109/DRC.2012.6257027","DOIUrl":null,"url":null,"abstract":"We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"5 1","pages":"55-56"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF current\",\"authors\":\"S. Gupta, J. Kulkarni, S. Datta, K. Roy\",\"doi\":\"10.1109/DRC.2012.6257027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"5 1\",\"pages\":\"55-56\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6257027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6257027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF current
We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.
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