SiO2/Si界面的化学和电子结构

F.J. Grunthaner, P.J. Grunthaner
{"title":"SiO2/Si界面的化学和电子结构","authors":"F.J. Grunthaner,&nbsp;P.J. Grunthaner","doi":"10.1016/S0920-2307(86)80001-9","DOIUrl":null,"url":null,"abstract":"<div><p>The motivation for understanding the physics and chemistry of the SiO<sub>2</sub>/Si interface lies in the pivotal role it plays in current metal-oxide-semiconductor (MOS) technology. In this paper, we are concerned with the chemical structure of this interface and its relationship to both MOS device processing chemistry and, ultimately, the resultant electrical device properties. Emphasis is placed on the use of X-ray photoemission to probe the structure of the SiO<sub>2</sub> near the SiO<sub>2</sub>/Si interface as well as the composition of the SiO<sub>2</sub>/Si chemical transition boundary itself. Complementary data from a wide range of other techniques such as <sup>29</sup>Si NMR, ellipsometry, SEXAFS, and a variety of electrical probes are also considered. The topics discussed include the presence of a structurally-distinct region of SiO<sub>2</sub> near the interface and its effect on the SiO<sub>2</sub> band gap, the distribution and crystallographic dependence of suboxide states at the monolayer SiO<sub>2</sub>/Si transition boundary, the effect of electron irradiation on the SiO<sub>2</sub> network structure, the influence of hydrogen on the SiO<sub>2</sub> valence band discontinuity between SiO<sub>2</sub> and Si, and the influence of processing chemistry on the chemical and electronic structure of the interface.</p></div>","PeriodicalId":100891,"journal":{"name":"Materials Science Reports","volume":"1 2","pages":"Pages 65-160"},"PeriodicalIF":0.0000,"publicationDate":"1986-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0920-2307(86)80001-9","citationCount":"347","resultStr":"{\"title\":\"Chemical and electronic structure of the SiO2/Si interface\",\"authors\":\"F.J. Grunthaner,&nbsp;P.J. Grunthaner\",\"doi\":\"10.1016/S0920-2307(86)80001-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The motivation for understanding the physics and chemistry of the SiO<sub>2</sub>/Si interface lies in the pivotal role it plays in current metal-oxide-semiconductor (MOS) technology. In this paper, we are concerned with the chemical structure of this interface and its relationship to both MOS device processing chemistry and, ultimately, the resultant electrical device properties. Emphasis is placed on the use of X-ray photoemission to probe the structure of the SiO<sub>2</sub> near the SiO<sub>2</sub>/Si interface as well as the composition of the SiO<sub>2</sub>/Si chemical transition boundary itself. Complementary data from a wide range of other techniques such as <sup>29</sup>Si NMR, ellipsometry, SEXAFS, and a variety of electrical probes are also considered. The topics discussed include the presence of a structurally-distinct region of SiO<sub>2</sub> near the interface and its effect on the SiO<sub>2</sub> band gap, the distribution and crystallographic dependence of suboxide states at the monolayer SiO<sub>2</sub>/Si transition boundary, the effect of electron irradiation on the SiO<sub>2</sub> network structure, the influence of hydrogen on the SiO<sub>2</sub> valence band discontinuity between SiO<sub>2</sub> and Si, and the influence of processing chemistry on the chemical and electronic structure of the interface.</p></div>\",\"PeriodicalId\":100891,\"journal\":{\"name\":\"Materials Science Reports\",\"volume\":\"1 2\",\"pages\":\"Pages 65-160\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S0920-2307(86)80001-9\",\"citationCount\":\"347\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science Reports\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0920230786800019\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science Reports","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0920230786800019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 347

摘要

理解SiO2/Si界面的物理和化学的动机在于它在当前的金属氧化物半导体(MOS)技术中起着关键作用。在本文中,我们关注该界面的化学结构及其与MOS器件加工化学和最终产生的电气器件性能的关系。重点介绍了利用x射线光发射探测SiO2/Si界面附近SiO2的结构以及SiO2/Si化学过渡边界本身的组成。补充数据从广泛的其他技术,如29Si核磁共振,椭偏,SEXAFS,和各种电探针也被考虑。讨论的主题包括:界面附近SiO2结构独特区域的存在及其对SiO2带隙的影响;单层SiO2/Si过渡边界处亚氧化物态的分布和晶体学依赖;电子辐照对SiO2网络结构的影响;氢对SiO2与Si之间价带不连续的影响;以及加工化学对界面化学和电子结构的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Chemical and electronic structure of the SiO2/Si interface

The motivation for understanding the physics and chemistry of the SiO2/Si interface lies in the pivotal role it plays in current metal-oxide-semiconductor (MOS) technology. In this paper, we are concerned with the chemical structure of this interface and its relationship to both MOS device processing chemistry and, ultimately, the resultant electrical device properties. Emphasis is placed on the use of X-ray photoemission to probe the structure of the SiO2 near the SiO2/Si interface as well as the composition of the SiO2/Si chemical transition boundary itself. Complementary data from a wide range of other techniques such as 29Si NMR, ellipsometry, SEXAFS, and a variety of electrical probes are also considered. The topics discussed include the presence of a structurally-distinct region of SiO2 near the interface and its effect on the SiO2 band gap, the distribution and crystallographic dependence of suboxide states at the monolayer SiO2/Si transition boundary, the effect of electron irradiation on the SiO2 network structure, the influence of hydrogen on the SiO2 valence band discontinuity between SiO2 and Si, and the influence of processing chemistry on the chemical and electronic structure of the interface.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Processing and microstructural control: lessons from natural materials Application of Mössbauer effect spectroscopy to the study of quasicrystalline materials Electronic and optical properties of conducting polymer thin films Editorial Board Thin film compound phase formation sequence: An effective heat of formation model
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1