a-IGZO TFTs中SiNx和SiO2栅极绝缘子不同电荷捕获机制的研究

{"title":"a-IGZO TFTs中SiNx和SiO2栅极绝缘子不同电荷捕获机制的研究","authors":"Young Wook Lee, Sun‐Jae Kim, Soo‐Yeon Lee, Woo-Geun Lee, Kap‐soo Yoon, Jaewoo Park, M. Han","doi":"10.1149/2.003204ESL","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"33 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"An Investigation of the Different Charge Trapping Mechanisms for SiNx and SiO2 Gate Insulator in a-IGZO TFTs\",\"authors\":\"Young Wook Lee, Sun‐Jae Kim, Soo‐Yeon Lee, Woo-Geun Lee, Kap‐soo Yoon, Jaewoo Park, M. Han\",\"doi\":\"10.1149/2.003204ESL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":11627,\"journal\":{\"name\":\"Electrochemical and Solid State Letters\",\"volume\":\"33 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrochemical and Solid State Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.003204ESL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.003204ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}