28nm及以上工艺节点制程窗口限制结构制程窗口发现方法研究

Xingdi Zhang, Hungling Chen, Yin Long, Kai Wang
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引用次数: 1

摘要

在28nm及以上工艺节点晶圆上,采用工艺窗口发现方法(PWD)对工艺窗口限制结构(PWLS)进行了评价。在过程窗口限定方法的基础上,对过程窗口发现方法进行了创新。研究了焦点能量矩阵(FEM)晶片条件、缺陷检测条件、缺陷滤波和采样方法等影响因素。利用创新的方法,在28nm晶圆上检测了工艺窗口限制结构。然后重新定义了更合理的工艺窗口目标和规格,包括光刻工艺和蚀刻工艺。此外,利用光场检测系统的纳米点函数对工艺窗口限制结构进行了增强监测。内联进程窗口发现方法在进程窗口评估、进程窗口限制结构定义甚至监控等方面具有时间优势,可以代替行末芯片探针(CP)测试。
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Study of Process Window Discovery Methodology for 28nm and Beyond Technology Node Process Window Limiting Structures
Process window limiting structures (PWLS) evaluated with process window discovery methodology (PWD) was studied on 28nm and beyond technology node wafers. Process window discovery methodology was innovated basing on process window qualification (PWQ) methodology. And the impacted factors, including focus energy matrix (FEM) wafer conditions, defects inspection conditions and defects filtering and sampling methods, were also investigated. With the innovated methodology, process window limiting structures were detected on 28nm wafers. Then the more reasonable process window target and spec, including lithography and etch process, were redefined. Furthermore, the process window limiting structures were enhanced monitored with Nano-point function of bright-field inspection system. Instead of end of line (EoL) chip probe (CP) test, inline process window discovery methodology has much time advantage for process window evaluation and process window limiting structures definition even monitoring.
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