{"title":"砷化铟外延激光器的工艺与性能","authors":"M. Brown, P. Porteous","doi":"10.1088/0508-3443/18/11/303","DOIUrl":null,"url":null,"abstract":"Processes are described for producing InAs diode lasers by liquid phase epitaxy. Measurements have been made on these lasers of wavelength of emission, power output, internal and external quantum efficiency, near- and far-field patterns and delay between current pulse and radiation output. We conclude that the efficiency of the lasers is low due partly to `spotty' emission and partly to a low non-radiative lifetime.","PeriodicalId":9350,"journal":{"name":"British Journal of Applied Physics","volume":"16 1","pages":"1527-1535"},"PeriodicalIF":0.0000,"publicationDate":"1967-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"The technology and properties of epitaxial indium arsenide lasers\",\"authors\":\"M. Brown, P. Porteous\",\"doi\":\"10.1088/0508-3443/18/11/303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Processes are described for producing InAs diode lasers by liquid phase epitaxy. Measurements have been made on these lasers of wavelength of emission, power output, internal and external quantum efficiency, near- and far-field patterns and delay between current pulse and radiation output. We conclude that the efficiency of the lasers is low due partly to `spotty' emission and partly to a low non-radiative lifetime.\",\"PeriodicalId\":9350,\"journal\":{\"name\":\"British Journal of Applied Physics\",\"volume\":\"16 1\",\"pages\":\"1527-1535\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1967-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"British Journal of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/0508-3443/18/11/303\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"British Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0508-3443/18/11/303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The technology and properties of epitaxial indium arsenide lasers
Processes are described for producing InAs diode lasers by liquid phase epitaxy. Measurements have been made on these lasers of wavelength of emission, power output, internal and external quantum efficiency, near- and far-field patterns and delay between current pulse and radiation output. We conclude that the efficiency of the lasers is low due partly to `spotty' emission and partly to a low non-radiative lifetime.
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