SEN提高生产力的节约技术

S. Ninomiya, Y. Okamoto, A. Ochi, T. Yumiyama, Y. Kimura, Yoshiaki Inda, M. Tsukihara
{"title":"SEN提高生产力的节约技术","authors":"S. Ninomiya, Y. Okamoto, A. Ochi, T. Yumiyama, Y. Kimura, Yoshiaki Inda, M. Tsukihara","doi":"10.1109/IIT.2014.6940028","DOIUrl":null,"url":null,"abstract":"Needless to say, productivity of ion implantation processes is a very important issue for economical device fabrication. Reduction of implant areas is one of the essential keys to increase a beam utilization factor for high-current ion implanters. SEN already developed the X-, Y-, D-, and F-SAVING system to address this issue. This time, another SAVING system, the O-SAVING, has been developed for the SHX-III/S. In result, the system reduces implant time in 40% from the original implant and more than 10% from the F-SAVING. This system can freely change the beam scan widths and positions, keeping the beam scan frequency constant. In this manner not only good uniformity is ensured but also a shape of implant area can be freely selected from arbitrary shapes such as a circle, a triangle, a semicircle, and so on.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SEN's SAVING techniques for productivity enhancement\",\"authors\":\"S. Ninomiya, Y. Okamoto, A. Ochi, T. Yumiyama, Y. Kimura, Yoshiaki Inda, M. Tsukihara\",\"doi\":\"10.1109/IIT.2014.6940028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Needless to say, productivity of ion implantation processes is a very important issue for economical device fabrication. Reduction of implant areas is one of the essential keys to increase a beam utilization factor for high-current ion implanters. SEN already developed the X-, Y-, D-, and F-SAVING system to address this issue. This time, another SAVING system, the O-SAVING, has been developed for the SHX-III/S. In result, the system reduces implant time in 40% from the original implant and more than 10% from the F-SAVING. This system can freely change the beam scan widths and positions, keeping the beam scan frequency constant. In this manner not only good uniformity is ensured but also a shape of implant area can be freely selected from arbitrary shapes such as a circle, a triangle, a semicircle, and so on.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"33 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6940028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6940028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

不用说,离子注入过程的生产率是经济器件制造的一个非常重要的问题。减小种植面积是提高大电流离子种植体束流利用率的关键之一。SEN已经开发了X-、Y-、D-和F-SAVING系统来解决这个问题。这一次,为SHX-III/S开发了另一种存储系统O-SAVING。结果,该系统比原始种植体减少了40%的种植时间,比f -节省了10%以上。该系统可以自由改变波束扫描宽度和位置,保持波束扫描频率恒定。这样不仅可以保证良好的均匀性,而且可以从圆形、三角形、半圆形等任意形状中自由选择植入区域的形状。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
SEN's SAVING techniques for productivity enhancement
Needless to say, productivity of ion implantation processes is a very important issue for economical device fabrication. Reduction of implant areas is one of the essential keys to increase a beam utilization factor for high-current ion implanters. SEN already developed the X-, Y-, D-, and F-SAVING system to address this issue. This time, another SAVING system, the O-SAVING, has been developed for the SHX-III/S. In result, the system reduces implant time in 40% from the original implant and more than 10% from the F-SAVING. This system can freely change the beam scan widths and positions, keeping the beam scan frequency constant. In this manner not only good uniformity is ensured but also a shape of implant area can be freely selected from arbitrary shapes such as a circle, a triangle, a semicircle, and so on.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Increase of sp3 content in a-C films with gas cluster ion beam bombardments; XPS and NEXAFS study NMOS source-drain extension ion implantation into heated substrates Activation of low-dose Si+ implant into In0.53Ga0.47As with Al+ and P+ co-implants The features of cold boron implantation in silicon Plasma Doping optimizing knock-on effect
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1