射频模块压印通模孔(i-TMV)隔层电磁干扰屏蔽效果验证

Motohiro Negishi, T. Shibata, Xinrong Li, N. Suzuki
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引用次数: 0

摘要

为了形成射频(RF)模块的隔室EMI屏蔽结构,我们提出了一种新的工艺,称为“压印-通过模孔(i-TMV)”,该工艺可以用硅母材压印并填充导电浆料来制造。本文制作了一个测试片,通过测量通孔阵漏出的电场强度,实际评价了i-TMV的电磁干扰屏蔽效果。结果发现,在4 GHz时屏蔽效果为23.6 dB,接近金属帽完全屏蔽值(25.6 dB)。这一结果表明,在Sub-6波段应用中,i-TMV作为隔室EMI屏蔽是非常有效的。
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Verification of Compartmental Electromagnetic Interference Shielding Effect with imprint-Through Mold Via (i-TMV) for RF modules
In order to form a compartmental EMI shielding structure for radio frequency (RF) modules, we have proposed the new process named ”imprint-Through Mold Via (i-TMV)”, which could be fabricated by imprinting with a silicon master and filling with conductive paste. In this work, a test coupon was fabricated and EMI shielding effect of the i-TMV was actually evaluated by measurement of the electric field strength that leaked through from via array. As a result, it was found that the shielding effect was 23.6 dB at 4 GHz, which was close to the completely shielded value with a metal cap (25.6 dB). This result indicated that the i-TMV was significantly effective as a compartmental EMI shielding for the Sub-6 band application.
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