{"title":"3 ~ 10nm量子光学光刻技术的最新进展","authors":"E. Pavel, G. Prodan, V. Marinescu, R. Trusca","doi":"10.1117/1.JMM.18.2.020501","DOIUrl":null,"url":null,"abstract":"Development of semiconductor technologies requires innovative approaches. Optical lithography, as a key element in this process, needs to be extended into the sub-10 nm range. Manipulation of matter in this range, in order to produce complex patterns, is a challenge for lithographic techniques. A diffraction-unlimited method (quantum optical lithography) for nanofabrication is detailed with applications in prototyping functional nanostructures. The writing method was applied to two different materials: resist and fluorescent glass–ceramics. Complex patterns (rectangles, triangles, and letters) with 3-nm linewidth were obtained on Si3N4 transmission electron microscopy grids covered by the resist.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"2014 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2019-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Recent advances in 3- to 10-nm quantum optical lithography\",\"authors\":\"E. Pavel, G. Prodan, V. Marinescu, R. Trusca\",\"doi\":\"10.1117/1.JMM.18.2.020501\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Development of semiconductor technologies requires innovative approaches. Optical lithography, as a key element in this process, needs to be extended into the sub-10 nm range. Manipulation of matter in this range, in order to produce complex patterns, is a challenge for lithographic techniques. A diffraction-unlimited method (quantum optical lithography) for nanofabrication is detailed with applications in prototyping functional nanostructures. The writing method was applied to two different materials: resist and fluorescent glass–ceramics. Complex patterns (rectangles, triangles, and letters) with 3-nm linewidth were obtained on Si3N4 transmission electron microscopy grids covered by the resist.\",\"PeriodicalId\":16522,\"journal\":{\"name\":\"Journal of Micro/Nanolithography, MEMS, and MOEMS\",\"volume\":\"2014 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2019-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Micro/Nanolithography, MEMS, and MOEMS\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1117/1.JMM.18.2.020501\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micro/Nanolithography, MEMS, and MOEMS","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.JMM.18.2.020501","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Recent advances in 3- to 10-nm quantum optical lithography
Development of semiconductor technologies requires innovative approaches. Optical lithography, as a key element in this process, needs to be extended into the sub-10 nm range. Manipulation of matter in this range, in order to produce complex patterns, is a challenge for lithographic techniques. A diffraction-unlimited method (quantum optical lithography) for nanofabrication is detailed with applications in prototyping functional nanostructures. The writing method was applied to two different materials: resist and fluorescent glass–ceramics. Complex patterns (rectangles, triangles, and letters) with 3-nm linewidth were obtained on Si3N4 transmission electron microscopy grids covered by the resist.