3 ~ 10nm量子光学光刻技术的最新进展

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2019-05-07 DOI:10.1117/1.JMM.18.2.020501
E. Pavel, G. Prodan, V. Marinescu, R. Trusca
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引用次数: 7

摘要

半导体技术的发展需要创新的方法。光学光刻作为这一过程的关键要素,需要扩展到10纳米以下的范围。为了产生复杂的图案,在这个范围内操纵物质是平版印刷技术的一个挑战。详细介绍了一种不受衍射限制的纳米制造方法(量子光学光刻)在功能纳米结构原型制作中的应用。该方法应用于两种不同的材料:抗蚀剂和荧光玻璃陶瓷。在被抗蚀剂覆盖的Si3N4透射电镜网格上获得了线宽为3nm的复杂图案(矩形、三角形和字母)。
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Recent advances in 3- to 10-nm quantum optical lithography
Development of semiconductor technologies requires innovative approaches. Optical lithography, as a key element in this process, needs to be extended into the sub-10 nm range. Manipulation of matter in this range, in order to produce complex patterns, is a challenge for lithographic techniques. A diffraction-unlimited method (quantum optical lithography) for nanofabrication is detailed with applications in prototyping functional nanostructures. The writing method was applied to two different materials: resist and fluorescent glass–ceramics. Complex patterns (rectangles, triangles, and letters) with 3-nm linewidth were obtained on Si3N4 transmission electron microscopy grids covered by the resist.
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来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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