具有紧凑DAC结构的3.8mW 8b 1GS/s 2b/周期交错SAR ADC

Chi-Hang Chan, Yan Zhu, Sai-Weng Sin, U. Seng-Pan, R. Martins
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引用次数: 61

摘要

提出了一个8b / 1GS/s的ADC,它与两个2b/周期的sar交织在一起。为了提高速度和节省功耗,原型采用了分段开关和定制的DAC阵列,在低寄生布局结构中具有高密度。它在1V电源下以1GS/s的速度工作,无需交错校准,功耗3.8mW,显示出24fJ/转换步长的FoM。包括片上偏移校准在内,ADC在65nm CMOS中占据0.013mm2的有源面积。
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A 3.8mW 8b 1GS/s 2b/cycle interleaving SAR ADC with compact DAC structure
An 8b 1GS/s ADC is presented that interleaves two 2b/cycle SARs. To enhance speed and save power, the prototype utilizes segmentation switching and custom-designed DAC array with high density in a low parasitic layout structure. It operates at 1GS/s from 1V supply without interleaving calibration and consumes 3.8mW of power, exhibiting a FoM of 24fJ/conversion step. The ADC occupies an active area of 0.013mm2 in 65nm CMOS including on-chip offset calibration.
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