掺ga或掺sb的InP晶体的电学和光学特性

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147361

X. Liu, S. Ye, B. Yang, J. Jiao, J. Zhao

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摘要

介绍了掺ga和掺sb的InP晶体的电学和光学特性。结果表明，等电子杂质(如Ga或Sb)的掺入对InP晶体的电学性能没有影响，等电子杂质掺入InP可形成稀固溶体，Sb的掺入可降低InP的天然缺陷。

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Electrical and optical characterizations of Ga-doped or Sb-doped InP crystal

Electrical and optical characterizations of Ga-doped and Sb-doped InP crystal are presented. It is shown that doping with isoelectronic impurities, such as Ga or Sb, does not affect the electrical properties of InP crystal, dilute solid solutions are formed by doping InP with isoelectronic impurities, and native defects in InP can be reduced by doping with Sb.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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