S. Falk, Youn‐ki Kim, Reiner Kaspareit, B. Colombeau, Yves Ritterhaus, H. Holtmeier, Marcel Lamaack
{"title":"使用SuperScan™和SuperScan II™改善p沟道功率MOSFET器件的Vt变化","authors":"S. Falk, Youn‐ki Kim, Reiner Kaspareit, B. Colombeau, Yves Ritterhaus, H. Holtmeier, Marcel Lamaack","doi":"10.1109/IIT.2014.6940048","DOIUrl":null,"url":null,"abstract":"SuperScan™ and SuperScan II™, software add-on programs that can be used with AMAT VIISta medium current implanters, have been used to improve center-to-edge Vt variations in a power device. By using SuperScan™ for implanting an n-type doped body implant, an improvement has been seen in radial, center-to-edge Vt variations by up to 32% (ΔVt = 170mV) compared to implanting without SuperScan™ (ΔVt = 250mV). However, if the Vt non-uniformity pattern is slightly off-center, the correction in Vt variation may be better suited for the use of SuperScan II™, which can implant radial patterns which are off-center. An improvement of up to 64% (ΔVt = 90mV) has been seen in center-to-edge Vt variations for off-center patterns by using SuperScan II™ for implanting the same n-type doped body implant.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"11 12 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Using SuperScan™ and SuperScan II™ to improve Vt variations in a p-channel power MOSFET device\",\"authors\":\"S. Falk, Youn‐ki Kim, Reiner Kaspareit, B. Colombeau, Yves Ritterhaus, H. Holtmeier, Marcel Lamaack\",\"doi\":\"10.1109/IIT.2014.6940048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SuperScan™ and SuperScan II™, software add-on programs that can be used with AMAT VIISta medium current implanters, have been used to improve center-to-edge Vt variations in a power device. By using SuperScan™ for implanting an n-type doped body implant, an improvement has been seen in radial, center-to-edge Vt variations by up to 32% (ΔVt = 170mV) compared to implanting without SuperScan™ (ΔVt = 250mV). However, if the Vt non-uniformity pattern is slightly off-center, the correction in Vt variation may be better suited for the use of SuperScan II™, which can implant radial patterns which are off-center. An improvement of up to 64% (ΔVt = 90mV) has been seen in center-to-edge Vt variations for off-center patterns by using SuperScan II™ for implanting the same n-type doped body implant.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"11 12 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6940048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6940048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Using SuperScan™ and SuperScan II™ to improve Vt variations in a p-channel power MOSFET device
SuperScan™ and SuperScan II™, software add-on programs that can be used with AMAT VIISta medium current implanters, have been used to improve center-to-edge Vt variations in a power device. By using SuperScan™ for implanting an n-type doped body implant, an improvement has been seen in radial, center-to-edge Vt variations by up to 32% (ΔVt = 170mV) compared to implanting without SuperScan™ (ΔVt = 250mV). However, if the Vt non-uniformity pattern is slightly off-center, the correction in Vt variation may be better suited for the use of SuperScan II™, which can implant radial patterns which are off-center. An improvement of up to 64% (ΔVt = 90mV) has been seen in center-to-edge Vt variations for off-center patterns by using SuperScan II™ for implanting the same n-type doped body implant.
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