{"title":"用于先进DFB激光器的反应蚀刻非均匀深度光栅","authors":"M. Matsuda, Y. Kotaki, H. Ishikawa, O. Wada","doi":"10.1109/ICIPRM.1991.147347","DOIUrl":null,"url":null,"abstract":"An ethane (C/sub 2/H/sub 2/) reactive ion etching (RIE) technique that offers smooth-etched morphology, high controllability of depth, and anisotropic geometries for forming a nonuniform-depth grating on an InP substrate is discussed. The fabrication of a lambda /4-shifted multiple quantum well (MQW) distributed feedback (DFB) laser with a 900 mu m cavity and a nonuniform-depth grating is described. It is shown that the larger threshold gain difference predicted by theory is obtained despite strong hole-burning.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"25 20 1","pages":"256-259"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reactively ion etched nonuniform-depth grating for advanced DFB lasers\",\"authors\":\"M. Matsuda, Y. Kotaki, H. Ishikawa, O. Wada\",\"doi\":\"10.1109/ICIPRM.1991.147347\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ethane (C/sub 2/H/sub 2/) reactive ion etching (RIE) technique that offers smooth-etched morphology, high controllability of depth, and anisotropic geometries for forming a nonuniform-depth grating on an InP substrate is discussed. The fabrication of a lambda /4-shifted multiple quantum well (MQW) distributed feedback (DFB) laser with a 900 mu m cavity and a nonuniform-depth grating is described. It is shown that the larger threshold gain difference predicted by theory is obtained despite strong hole-burning.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"25 20 1\",\"pages\":\"256-259\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147347\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reactively ion etched nonuniform-depth grating for advanced DFB lasers
An ethane (C/sub 2/H/sub 2/) reactive ion etching (RIE) technique that offers smooth-etched morphology, high controllability of depth, and anisotropic geometries for forming a nonuniform-depth grating on an InP substrate is discussed. The fabrication of a lambda /4-shifted multiple quantum well (MQW) distributed feedback (DFB) laser with a 900 mu m cavity and a nonuniform-depth grating is described. It is shown that the larger threshold gain difference predicted by theory is obtained despite strong hole-burning.<>
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