一种基于mems氧化层的MOS辐射剂量计

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Pub Date : 2015-08-06 DOI:10.1109/TRANSDUCERS.2015.7181133

H. Liu, Y. Yang, J. Zhang

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引用次数: 1

摘要

本文报道了一种利用MEMS技术制作的具有极厚且富含缺陷的氧化层的MOS剂量计。我们将深度反应离子刻蚀(DRIE)、热氧化和LPCVD相结合，制备了一个含有多个大界面的5μm氧化层。用60Co γ射线以2Gy / min的速度照射2小时，用热刺激电流(TSC)法测定剂量计读数。结果表明，在450nA附近存在峰值电流，TSC总电荷量为158μC，灵敏度为5.5nC/mm2·Gy，是以往MOS剂量计灵敏度的40倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel MOS radiation dosimeter based on the MEMS-made oxide layer

This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. We combined deep-reactive-ion etching (DRIE), thermal oxidation and LPCVD to prepare an oxide layer of 5μm containing multiple and large interfaces. Our devices were irradiated by γ-rays of 60Co at 2Gy per minute for 2hrs and thermally stimulated current (TSC) method was used to determine the readout of dosimeters. Results show that there is a peak current about 450nA, indicating a total TSC charge of 158μC and sensitivity of 5.5nC/mm2·Gy, which is 40 times the sensitivity of previous MOS dosimeters.

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2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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