N. Unami, H. Noma, K. Sakuma, A. Shigetou, S. Shoji, J. Mizuno
{"title":"真空紫外和甲酸蒸气表面处理无焊剂倒装片键合的研究","authors":"N. Unami, H. Noma, K. Sakuma, A. Shigetou, S. Shoji, J. Mizuno","doi":"10.1109/ISAPM.2011.6105704","DOIUrl":null,"url":null,"abstract":"We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O3 and/or formic acid treatment is about twice that of a bump with no treatment.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment\",\"authors\":\"N. Unami, H. Noma, K. Sakuma, A. Shigetou, S. Shoji, J. Mizuno\",\"doi\":\"10.1109/ISAPM.2011.6105704\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O3 and/or formic acid treatment is about twice that of a bump with no treatment.\",\"PeriodicalId\":6440,\"journal\":{\"name\":\"2011 International Symposium on Advanced Packaging Materials (APM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Symposium on Advanced Packaging Materials (APM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAPM.2011.6105704\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Symposium on Advanced Packaging Materials (APM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAPM.2011.6105704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment
We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O3 and/or formic acid treatment is about twice that of a bump with no treatment.