{"title":"AsH3等离子体浸没离子注入硅的模拟","authors":"A. Burenkov, J. Lorenz, Y. Spiegel, F. Torregrosa","doi":"10.1109/IIT.2014.6940004","DOIUrl":null,"url":null,"abstract":"Plasma immersion ion implantation from AsH<sub>3</sub> plasma into (100) crystalline silicon was performed using the PULSION tool of Ion Beam Services. Ultra-shallow arsenic doping profiles with maximum concentrations in excess of 1×10<sup>22</sup> cm<sup>-3</sup> and penetration depths below 10 nm at a concentration of 1×10<sup>18</sup> cm<sup>-3</sup> were obtained. Two simulation models were applied to describe the observed arsenic profiles: the one developed by the authors earlier for BF<sub>3</sub> plasma and a new one that accounts for the specifics of AsH<sub>3</sub> plasma.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Simulation of AsH3 plasma immersion ion implantation into silicon\",\"authors\":\"A. Burenkov, J. Lorenz, Y. Spiegel, F. Torregrosa\",\"doi\":\"10.1109/IIT.2014.6940004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Plasma immersion ion implantation from AsH<sub>3</sub> plasma into (100) crystalline silicon was performed using the PULSION tool of Ion Beam Services. Ultra-shallow arsenic doping profiles with maximum concentrations in excess of 1×10<sup>22</sup> cm<sup>-3</sup> and penetration depths below 10 nm at a concentration of 1×10<sup>18</sup> cm<sup>-3</sup> were obtained. Two simulation models were applied to describe the observed arsenic profiles: the one developed by the authors earlier for BF<sub>3</sub> plasma and a new one that accounts for the specifics of AsH<sub>3</sub> plasma.\",\"PeriodicalId\":6548,\"journal\":{\"name\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"volume\":\"1 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 20th International Conference on Ion Implantation Technology (IIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIT.2014.6940004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6940004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of AsH3 plasma immersion ion implantation into silicon
Plasma immersion ion implantation from AsH3 plasma into (100) crystalline silicon was performed using the PULSION tool of Ion Beam Services. Ultra-shallow arsenic doping profiles with maximum concentrations in excess of 1×1022 cm-3 and penetration depths below 10 nm at a concentration of 1×1018 cm-3 were obtained. Two simulation models were applied to describe the observed arsenic profiles: the one developed by the authors earlier for BF3 plasma and a new one that accounts for the specifics of AsH3 plasma.
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