zno基纳米颗粒的研究进展:各种掺杂剂的合成方法及应用

N. Rauf
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引用次数: 0

摘要

本文综述了稀土金属、过渡金属、贵金属、贫金属和非金属掺杂对ZnO纳米粒子的影响。ZnO是一种半导体材料,其平均能带宽度为3.2 eV。掺杂是提高ZnO性能的重要手段,其性能的提高与掺杂的应用密切相关。掺杂浓度、掺杂类型、溶胶-凝胶法、水热法和沉淀法对ZnO晶格参数的修饰均有影响。过渡金属广泛用于光催化剂和传感器。ZnO纳米粒子作为半导体材料的掺杂应用已被证明在实现各种光催化、葡萄糖生物传感器、VOC检测传感器、抗菌、生物医学、光电自旋电子、LED、NLO和硅太阳能电池方面具有优势。这一综述为今后选择具有理想性能和应用前景的氧化锌合成方法提供了参考。
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Recent Progress of ZnO-Based Nanoparticle: Synthesizing Methods of Various Dopant and Applications
This review focus on the effect of doping rare earth metals, transition metals, noble metals, poor metals, and non-metals on ZnO nanoparticles. ZnO is a semiconductor material with an average wide energy band gap of 3.2 eV. The doping is used to improve the properties of ZnO which strongly depend on their application. The concentration of doping, the type of doping and the process using sol-gel, hydrothermal and precipitation methods are affected in modifying the ZnO lattice parameters. The transition metal widely used for photocatalysts and sensors. The doped application of ZnO nanoparticles as a semiconductor material has proven advantageous in enabling various photocatalytic, glucose biosensors, VOC detection sensors, antibacterial, biomedical, and optoelectronic spintronic, LED, NLO, and silicon solar cells. This review provided information for scientist in choosing the synthesizing methods of ZnO with desired properties and application in future.
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